4553 datasheet(138/145 Pages) RENESAS

138 / 145 page

Rev.3.02

Dec 22, 2006

page 138 of 142

REJ03B0024-0302

4553 Group

VOLTAGE DROP DETECTION CIRCUIT CHARACTERISTICS

(One Time PROM version: Ta = –20 °C to 85 °C, unless otherwise noted)

Test conditions

Ta = 25 °C

-20 °C

≤ Ta < 0 °C

0 °C

≤ Ta < 50 °C

50 °C

≤ Ta ≤ 85 °C

Ta = 25 °C

-20 °C

≤ Ta < 0 °C

0 °C

≤ Ta < 50 °C

50 °C

≤ Ta ≤ 85 °C

VDD = 3 V

VDD

→ (VRST– – 0.1 V)

Parameter

Detection voltage

(reset occurs) (Note 2)

Detection voltage

(reset release) (Note 3)

Detection voltage hysteresis

Operation current (Note 4)

Detection time (Note 5)

Symbol

VRST–

VRST+

VRST+ –

VRST–

IRST

TRST

Limits

Unit

Min.

1.6

1.7

1.4

1.2

1.7

1.8

1.5

1.3

Typ.

1.8

1.9

0.1

0.2

Max.

2.3

2.2

1.9

2.1

2.4

2.3

1.2

µA

Notes 1: The voltage drop detection circuit is equipped with only the H version.

2: The detection voltage (VRST–) is defined as the voltage when reset occurs when the supply voltage (VDD) is falling.

3: The detection voltage (VRST+) is defined as the voltage when reset is released when the supply voltage (VDD) is rising from reset occurs.

4: In the H version, IRST is added to IDD (supply current).

5: The detection time (TRST) is defined as the time until reset occurs when the supply voltage (VDD) is falling to [VRST– – 0.1 V].

6: The detection voltages (VRST+, VRST–) are set up lower than the minimum value of the supply voltage of the recommended operating conditions.

As for details, refer to the LIST OF PRECAUTIONS.

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