| Electronic Components Datasheet Search |
|
38K2 Datasheet(PDF) 107 Page - Renesas Technology Corp |
|
|
|||||||||||||||||||||||||||||
38K2 Datasheet(HTML) 107 Page - Renesas Technology Corp |
|
107 / 358 page ![]() FUNCTIONAL DESCRIPTION Rev.2.00 Oct 15, 2006 page 88 of 130 38K2 Group REJ09B0338-0200 HARDWARE Fig. 128 Memory channel tranmitting operation (2) (7) Memory Channel Transmitting Operation (2)- Burst Mode Memory channel transmitting operation (2) is shown bellow. #0 #1 #2 Mch_req #0 #1 #2 012 3 4 5 req req req 010016 010116 010216 010316 ack ack ack DMA acknowledge ExDACK mRD detection mRD detection DMA request ExDREQ ➀ ➀ ➁➂’ ➂’ ➂ ➂ ➃➄ ➁➃ ➄ ➅ ➅ Address ExA0 Chip select ExCS Read ExRD Write ExWR Data DQ0 to DQ7 Internal clock φ Transmit buffer TXBUF Operation enabled Transmission completed Main sequencer Internal memory access Acknowledgment of internal memory access Memory address Counter end Burst end Memory channel operation end interrupt <Initial setting> External I/O configuration register Set as necessary. Memory channel operation mode register MC_DIR[1:0] (Memory channel direction control) = 102 (Transmit mode) Burst (burst) = “1” (Burst mode) Memory address counter (Example) 010016 End address register (Example) 010216 <Operation start command> EXB interrupt source enable register MC_ENB (Memory channel operation enable) = “1” (Operation start) ➀ In the memory channel transmit mode when the command for enabling operation is written, an internal memory access sequence which synchronized with a rise of φ is activated. ➁ A data is read out from the internal memory within two clocks at a minimum and this data is stored in the transmit buffer (TXBUF). The memory address counter is simultaneously increased and assertion of the memory channel request is made. ➂ When a rise of ExRD is detected, an internal memory access sequence which synchronized with a rise of φ is activated. ➃ A data is read out from the internal memory within two clocks at a minimum and this data is stored in the transmit buffer (TXBUF). The memory address counter is simultaneously increased. ➄ When the read operation from the end address has been completed, the detection circuit of external read signal (ExRD) operation is enabled and negation of the memory channel request which synchronized with the following φ is made. ➅ When a rise of ExRD is detected, the memory channel operation sequence ends and the memory channel operation end interrupt is generated. Dack = “0” A0 = “x” CS = “1” Dack = “0” A0 = “x” CS = “1” Dack = “0” A0 = “x” CS = “1” |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |