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SH7014 Datasheet(PDF) 574 Page - Renesas Technology Corp |
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SH7014 Datasheet(HTML) 574 Page - Renesas Technology Corp |
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574 / 754 page ![]() 18. 128 kB Flash Memory (F-ZTAT) Rev.5.00 Sep. 27, 2007 Page 540 of 716 REJ09B0398-0500 18.11.5 Auto-Erase Mode 1. Auto-erase mode supports only entire memory erasing. 2. Do not perform a command write during auto-erasing. 3. Confirm normal end of auto-erasing by checking I/O6. Alternatively, status read mode can also be used for this purpose (I/O7 status polling uses the auto-erase operation end identification pin). 4. Status polling I/O6 and I/O7 pin information is retained until the next command write. As long as the next command write has not been performed, reading is possible by enabling CE and OE. Table 18.17 AC Characteristics in Auto-Erase Mode Conditions: V CC = 5.0 V ±10%, VSS = 0 V, Ta = 25°C ±5°C Item Symbol Min Max Unit Notes Command write cycle t nxtc 20 μs CE hold time t ceh 0 ns CE setup time t ces 0 ns Data hold time t dh 50 ns Data setup time t ds 50 ns Write pulse width t wep 70 ns Status polling start time t ests 1 ms Status polling access time t spa 150 ns Memory erase time t erase 100 40000 ms Erase setup time t ens 100 ns Erase end setup time t enh 100 ns WE rise time t r 30 ns WE fall time t f 30 ns |
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