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EPC110 Datasheet(PDF) 14 Page - Espros Photonics corp |
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EPC110 Datasheet(HTML) 14 Page - Espros Photonics corp |
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14 / 27 page ![]() epc110 DEC 1 17 12...9 Weight of missing pulse counts. Refer to Pulse Modulated Operation (e.g. OUTNint to OUTN) : Minimum number of missing pulses nM of light detection for counting the r elease time (fall time) tF. 12 11 10 9 DEC Min. nM Setting 0 0 0 0 0 32768 X (Default setting) 0 0 0 1 1 16384 0 0 1 0 2 8192 0 0 1 1 3 4096 0 1 0 0 4 2048 0 1 0 1 5 1024 0 1 1 0 6 512 0 1 1 1 7 256 1 0 0 0 8 128 1 0 0 1 9 64 1 0 1 0 10 32 1 0 1 1 11 16 1 1 0 0 12 8 X (typical setting) 1 1 0 1 13 4 1 1 1 0 14 2 1 1 1 1 15 1 TPER 1 17 15...13 For fork light barrier, standalone mode: LED cycle time tCycle. For fork light barrier, controlled mode: Select next lower value then external EN cycle time. 15 14 13 Values Default Recommended Setting 0 0 0 5μs X 0 0 1 10μs 0 1 0 30μs 0 1 1 100μs X (typical setting) 1 0 0 300μs 1 0 1 1ms 1 1 0 10ms 1 1 1 100ms Parameter Name Register No. Bit No. Function ROM RAM FUSEBIT 2 18 0 During write operation to this RAM register, put this bit = 0. This bit will be set automatically, when corresponding ROM register is programmed. 0 Values 0 The corresponding ROM register is not programmed 1 The corresponding ROM register is programmed SENSN 2 18 3...1 Lower threshold setting of the photo current sensitivity IPDN to trigger output OUTN. 3 2 1 Values Default Recommended Comments 0 0 0 24nA X A lower value increases the sensitivity. A too sensitive setting leads to false readings because of shot noise of the receiver photo diode and the internal amplifier (typ. input noise level is 7nA RMS without photo diode). Also induced EMI can lead to false readings if the sensitivity is set too low. The EMI sensitivity is heavily depending on the system architecture and the electromechanical design. The better the shielding of the chip and the photo diode and the better the PCB layout, the better the EMI immunity. The tolerance of the threshold is approx. ±25%. 0 0 1 36nA 0 1 0 48nA 0 1 1 60nA X 1 0 0 72nA 1 0 1 84nA 1 1 0 96nA 1 1 1 108nA © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 14 Datasheet epc110 - V2.1 www.espros.ch |
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