DAC161S997RGHT datasheet(6/27 Pages) TI

6 / 27 page

DAC161S997

SNAS621 – JUNE 2013

www.ti.com

ELECTRICAL CHARACTERISTICS (continued)

Unless otherwise noted, these specifications apply for VA = VD = 3.3 V, COMA = COMD = 0 V, TA= 25°C, external bipolar

transistor: 2N3904, RE = 22

Ω, C1 = C2 = C3 = 2.2 nF. Boldface limits are over the temperature range of –40°C ≤ TA ≤

105°C

PARAMETER

TEST CONDITIONS

MIN(1)

TYP

MAX(1)

UNIT

DIGITAL OUTPUT CHARACTERISTICS

VOL

Output Low voltage

Isink = 200 μA

0.4

VOH

Output HIGH voltage

Isink = 200 μA

2.6

IOZH, IOZL

TRI-STATE leakage current

–10

µA

COUT

TRI-STATE output capacitance

DIGITAL INTERFACE TIMING

fCLK

SCLK frequency

MHz

SCLK high time

0.4 / FCLK

SCLK low time

0.4 / FCLK

tCSB

CSB pulse width

tCSS

CSB set-up time prior to SCLK rising

edge

tSCH

24th rising edge of SCLK to CSB

rising edge

tCSH

CSB hold time after the 24th falling

edge of SCLK

tZSDO

CSB falling edge to SDO valid

tSDOZ

CSB rising edge to SDO HiZ

tDS

SDI data set-up time prior to SCLK

rising edge

tDH

SDI data hold time after SCLK rising

edge

tDO

SDO output data valid

SPI Timing Diagrams

Figure 1.

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