SIC401DB datasheet(13/28 Pages) VISHAY

13 / 28 page

Vishay Siliconix

SiC401A, SiC401BCD

Document Number: 63835

S12-2109-Rev. C, 03-Sep-12

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: powerictechsupport@vishay.com

ELECTRICAL CHARACTERISTICS

Transient Response - FCM

(VDD = 5 V, VIN = 12 V, VOUT = 1.5 V, IOUT = 0 A to 11 A, SiC401B, dI/dt = 1 A/µs)

Transient Response - P-Save Load Rising

(VDD = 5 V, VIN = 12 V, VOUT = 1.5 V, IOUT = 0 A to 11 A, SiC401A, dI/dt = 1 A/µs)

Over Current Protection-Under Voltage Prodection

(VDD = 5 V, VIN = 12 V, VOUT = 1.5 V, SiC401B)

(5V/div)

(4A/div)

(50mV/div)

IOUT :0A to 11A

Time(20

µs/div)

VOUT RIPPLE

(5V/div)

(100mV/div)

VOUT RIPPLE

IOUT:0A to 11A

(4A/div)

Time(10

µs/div)

Time(100

µs/div)

(5V/div)

(500mV/div)

(5A/div)

Pgood

VOUT

Inductor

Over Temperature Shutdown at 133.4 °C

(VIN = 12 V, VOUT = 1.5 V, IOUT = 0 A, LDO Mode, SiC401B)

Transient Response - P-Save Load Falling

(VDD = 5 V, VIN = 12 V, VOUT = 1.5 V, IOUT = 11 A to 0 A, SiC401A, dI/dt = 1 A/µs)

(5V/div)

(2V/div)

Pgood

Time(500

µs/div)

(5V/div)

VOUT RIPPLE

Time(20

µs/div)

(4A/div)

(100mV/div)

IOUT:0A to 11A

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