AM79C975 datasheet(94/304 Pages) AMD

94 / 304 page

Am79C973/Am79C975

P R E L I M INARY

Figure 43. Expansion ROM Bus Read Sequence

Figure 44. Flash Read from Expansion Bus Data Port

The EROMCS is driven low for the value ROMTMG +

1. Figure 44 assumes that ROMTMG is set to nine.

EBD[7:0] is sampled with the next rising edge of CLK

ten clock cycles after EBUA_EBA[7:0] was driven with

a new address value. This PCI slave access to the

Flash/EPROM will result in a retry for the very first ac-

cess. Subsequent accesses may give a retry or not, de-

pending on whether or not the data is present and valid.

The access time is dependent on the ROMTMG bits

(BCR18, bits 15-12) and the Flash/EPROM. This ac-

cess mechanism differs from the Expansion ROM ac-

cess mechanism since only one byte is read in this

manner, instead of the 4 bytes in an Expansion ROM

access. The PCI bus will not be held during accesses

through the Expansion Bus Data Port. If the LAAINC

(BCR29, bit 15) is set, the EBADDRL address will be

incremented and a continuous series of reads from the

Expansion Data Port (EBDATA, BCR30) is possible.

The address incrementor will roll over without warning

and without incrementing the upper address EBAD-

DRU.

The Flash write is almost the same procedure as the

read access, except that the Am79C973/Am79C975

controller will not drive AS_EBOE low. The EROMCS

and EBWE are driven low for the value ROMTMG

again. The write to the FLASH port is a posted write

and will not result in a retry to the PCI unless the host

tries to write a new value before the previous write is

complete, then the host will experience a retry. See Fig-

ure 45.

CLK

EBUA_EBA [7:0]

Latched Address

EBDA [15:8]

EBD

AS_EBO

EROMCS

FRAME

IRDY

TRDY

DEVSEL

A[7:2], 0, 1

A[7:2], 0, 0

A[19:16]

A[7:2], 1, 0

A[7:2], 1, 1

21510D-48

21510D-49

EBUA_EBA[7:0]

EBD[7:0]

AS_EBOE

EROMCS

EBUA[19:16]

EBDA[15:8]

EBA[7:0]

CLK

AM79C975 Datasheet(PDF) 94 Page - Advanced Micro Devices

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