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AN2450 Datasheet(PDF) 17 Page - STMicroelectronics |
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AN2450 Datasheet(HTML) 17 Page - STMicroelectronics |
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17 / 35 page ![]() DocID12784 Rev 6 17/35 AN2450 ZVS constraints 35 Due to the phase lag of the input current with respect to the input voltage, at the end of the first half cycle the inductor current Irt is still flowing into the circuit and, therefore it can deplete CZVS so that its voltage swings from V to zero (it will be vice versa during the second half cycle). In order to guarantee ZVS, the tank current at the end of the first half cycle (considering the dead time negligible as compared to the switching period, so that the current change is negligible as well) must exceed the minimum value necessary to deplete CZVS within the dead time interval TD, which means: Equation 40 This current equals, of course, the peak value of the reactive current flowing through the resonant tank (it is 90° out-of-phase); the one that determines the reactive power level into the circuit: Equation 41 Moreover, as the rms component of the tank current associated to the active power is: Equation 42 we can derive also the rms value of the resonant tank current and the phase lag between input voltage and current (that is the input impedance phase angle at that operating point): Equation 43 Equation 44 Thus we can write the following analytic expression: Equation 45 which is the sufficient condition for ZVS of the half-bridge Power MOSFETs, to be applied to the whole operating range. The solution of Equation 45 for the quality factor Qzvs that ensures ZVS behavior at full load and minimum input voltage is not convenient. Izvs irt Tsw 2 --------- Czvs V TD ------- 2COSS Cstray + Vdc TD --------- == = Izvs 2Irt sin = Iact Irt cos Pin ViFHA --------------- = = . Irt Irt 2 2 Irt 2 2 sin + cos Pin ViFHA --------------- 2 Izvs 2 2 ------------ + = = . a Pin ViFHAIrt --------------------- cos = . tan Im Zn fn Q Re Zn fn Q ------------------------------------------- Czvs T D ------------ Vdc 2 Pin ------------ = |
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