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AN1703 Datasheet(PDF) 2 Page - STMicroelectronics

Part # AN1703
Description  GUIDELINES FOR USING ST?셎 MOSFET SMD PACKAGES
PDF  22 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN1703 Datasheet(HTML) 2 Page - STMicroelectronics

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AN1703 - APPLICATION NOTE
2/22
required to calculate the junction to PCB thermal resistance (°C/W).
The procedure has two main steps. First is the characterization of the body diode. Second is the
temperature rise measurements and calculation of the thermal resistance.
As an inherent part of the MOSFET structure, the body diode makes the ideal sensor to measure the
junction temperature, since the forward voltage VF varies with temperature, approximately -2.2mV/°C.
For this the diode's temperature coefficient is needed to get an accurate representation of the junction
temperature. The forward voltage is measured with a low level current flowing through it to ensure there
is no self heating, which would make the junction temperature measurement inaccurate.
The MOSFET being characterized is soldered on to the thermal test PCB and has the gate shorted to the
source, to insure the MOSFET cannot turn on. The copper mounting pad reaches the remote connection
points through fine traces that do not contribute significant thermal dissipation but serve the purpose of
electrical connections.
Figure 1 illustrate the schematic of RTH measurements where the MOSFET 's drain and source are
connected with two power supplies.
Figure 1: Schematic of temperature measurements
The first power supply forces current through the body diode to heat the junction with a fixed power level,
when the switch is in the "heating" position. The second power supply provides the sensing current for
measuring the junction temperature, through the VF measurement, when the switch is in the "sensing"
position.
The measure of RTHJ-PCB is based on the well know relationship between the power being dissipated in
the devices and the relevant arising junction temperature:
This computation is made from pulsed operation to steady state in order to achieve the whole thermal
transient response of the device under test. The applied power PD is fixed by the equipment in terms of
magnitude and time duration, so it is an input data.
HEATING
CURRENT
Vf
HEATING
SENSING
Pmos
D.U.T.
Sense
Current
HEATING
CURRENT
Vf
HEATING
SENSING
Pmos
D.U.T.
Sense
Current
D
C
J
D
PCB
THJ
P
T
T
P
T
R
−
=
∆
=
−



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