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LP38859 Datasheet(PDF) 4 Page - Texas Instruments |
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LP38859 Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 25 page ![]() LP38859 SNVS337F – JUNE 2006 – REVISED SEPTEMBER 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) MIN MAX UNIT VIN supply voltage (survival) −0.3 6 V VBIAS supply voltage (survival) −0.3 6 V VSS soft-start voltage (survival) −0.3 6 V VOUT voltage (survival) −0.3 6 V IOUT current (survival) Internally limited Power dissipation(3) Internally limited Junction temperature 40 150 °C Storage temperature, Tstg −65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) If Military/Aerospace specified devices are required, contact the TI Sales Office/ Distributors for availability and specifications. (3) Device power dissipation must be de-rated based on device power dissipation (PD), ambient temperature (TA), and package junction to ambient thermal resistance (RθJA). Additional heat-sinking may be required to ensure that the device junction temperature (TJ) does not exceed the maximum operating rating. See the Application and Implementation section for details. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VIN supply voltage (VOUT + VDO) VBIAS V VBIAS supply voltage 3 5.5 V IOUT 0 3 A Junction temperature(1) −40 125 °C (1) Device power dissipation must be de-rated based on device power dissipation (PD), ambient temperature (TA), and package junction to ambient thermal resistance (RθJA). Additional heat-sinking may be required to ensure that the device junction temperature (TJ) does not exceed the maximum operating rating. See the Application and Implementation section for details. 6.4 Thermal Information LP38859 THERMAL METRIC(1) KTT (DDPAK/TO-263 NDH (TO-220) UNIT 5 PINS 5 PINS RθJA Junction-to-ambient thermal resistance 43.2 70.7(2) °C/W RθJC(top) Junction-to-case (top) thermal resistance 43.5 43.0 °C/W RθJB Junction-to-board thermal resistance 23.1 n/a(2) °C/W ψJT Junction-to-top characterization parameter 11.6 23.6(2) °C/W ψJB Junction-to-board characterization parameter 22.0 52.2(2) °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 1.1 1.3 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. (2) The NDH (TO-220) package is vertically mounted in center of JEDEC High-K test board (JESD 51-7) with no additional heat sink. This is a through-hole package; this is NOT a surface mount package. 4 Submit Documentation Feedback Copyright © 2006–2015, Texas Instruments Incorporated Product Folder Links: LP38859 |
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