7

4 Meg x 4 FPM DRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

D49_5V.p65 – Rev. 5/00

©2000, Micron Technology, Inc.

4 MEG x 4

FPM DRAM

AC ELECTRICAL CHARACTERISTICS

(Notes: 5, 6, 7, 8, 9, 10, 11, 12) [Vcc (MIN)

£ Vcc £ Vcc (MAX)]

AC CHARACTERISTICS

-5

-6

PARAMETER

SYMBOL

MIN

MAX

MIN

MAX

UNITS

NOTES

Refresh period “S” version

128

128

ms

140

RAS# precharge time

30

40

ns

RAS# to CAS# precharge time

5

5

ns

RAS# precharge time exiting Self Refresh

90

105

ns

READ command hold time (referenced to RAS#)

0

0

ns

16

RAS# hold time

13

15

ns

READ-WRITE cycle time

116

140

ns

RAS# to WE# delay time

67

79

ns

19

WRITE command to RAS# lead time

13

15

ns

Transition time (rise or fall)

50

2

50

ns

WRITE command hold time

8

10

ns

WRITE command hold time (referenced to RAS#)

38

45

ns

WE# command setup time

0

0

ns

18

WRITE command pulse width

5

5

ns

WE# hold time (CBR Refresh)

8

10

ns

4, 23

WE# setup time (CBR Refresh)

8

10

ns

4, 23