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L9662 Datasheet(PDF) 17 Page - STMicroelectronics

Part # L9662
Description  Octal squib driver and quad Manchester/PSI5 encoded sensor
PDF  80 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L9662 Datasheet(HTML) 17 Page - STMicroelectronics

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DocID028325 Rev 1
17/80
L9662
Electrical specifications
79
tisrcshtdwn
Time after voltage threshold
crossed for squib pin to
shutdown
IISRC
Guaranteed by design
-
-
30
μs
VLSDrsqb
Voltage threshold on squib
pin to shutdown ISRC
-
0.8
-
2.2
V
tR_WAIT
Rmeas wait time 6
Wait time before AOUT
voltage is stable for ADC
reading
-
-
300
μs
FENx Input pins
tFENfilter
Minimum pulse width
-
12
-
16
μs
IFENPD
Internal pull-down current
VIN = VIL to VDD
20
-
50
μA
VFENLO
Input low voltage threshold
-
0.8
-
V
VFENHI
Input high voltage threshold
-
-
-
2.0
V
TFENLATCH FEN Latch timer
-
0
-
512
ms
tFLACC
FEN latch timer
accuracy
-
- 20%
-
20
%
Deployment drivers
TRESOLUTION Diagnostic timing / resolution Guaranteed by design,
IHS ≥ IMEAS,
0s ≤ TMEASURE_TIME ≤ 3.7 ms
CSQUIB _HI = 0.12 μF
CSQUIB _LO = 0.12 μF
22.5
25
27.5
μs
TACCURACY
Diagnostic timing
accuracy
-
-
2
LSB
IMEAS
High side driver current limit
detect threshold
Guaranteed by design
IHSX x
0.90
-
IHSX x
0.99
A
Vbreakdown
HS or LS breakdown
voltage
Voltage across driver = 40 V
-
-
50
μA
RDSonTOTAL
Total high and low side MOS
on resistance
High side MOS +
low side MOS D9:D8=”11”;
VRES = 7 V; I = 1.6A @95 °C
-
-
2.0
Ω
RDSonHS
High side MOS on resistance D9:D8=”11”; VRES = 7 V;
IVRES = 1.6 A;
-
0.3
0.8
Ω
RDSonLS
Low side MOS on resistance
-
0.6
1.2
Ω
Table 7. Squib deployment drivers and diagnostics - DC electrical characteristics
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit



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