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L9662 Datasheet(PDF) 17 Page - STMicroelectronics |
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L9662 Datasheet(HTML) 17 Page - STMicroelectronics |
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17 / 80 page ![]() DocID028325 Rev 1 17/80 L9662 Electrical specifications 79 tisrcshtdwn Time after voltage threshold crossed for squib pin to shutdown IISRC Guaranteed by design - - 30 μs VLSDrsqb Voltage threshold on squib pin to shutdown ISRC - 0.8 - 2.2 V tR_WAIT Rmeas wait time 6 Wait time before AOUT voltage is stable for ADC reading - - 300 μs FENx Input pins tFENfilter Minimum pulse width - 12 - 16 μs IFENPD Internal pull-down current VIN = VIL to VDD 20 - 50 μA VFENLO Input low voltage threshold - 0.8 - V VFENHI Input high voltage threshold - - - 2.0 V TFENLATCH FEN Latch timer - 0 - 512 ms tFLACC FEN latch timer accuracy - - 20% - 20 % Deployment drivers TRESOLUTION Diagnostic timing / resolution Guaranteed by design, IHS ≥ IMEAS, 0s ≤ TMEASURE_TIME ≤ 3.7 ms CSQUIB _HI = 0.12 μF CSQUIB _LO = 0.12 μF 22.5 25 27.5 μs TACCURACY Diagnostic timing accuracy - - 2 LSB IMEAS High side driver current limit detect threshold Guaranteed by design IHSX x 0.90 - IHSX x 0.99 A Vbreakdown HS or LS breakdown voltage Voltage across driver = 40 V - - 50 μA RDSonTOTAL Total high and low side MOS on resistance High side MOS + low side MOS D9:D8=”11”; VRES = 7 V; I = 1.6A @95 °C - - 2.0 Ω RDSonHS High side MOS on resistance D9:D8=”11”; VRES = 7 V; IVRES = 1.6 A; - 0.3 0.8 Ω RDSonLS Low side MOS on resistance - 0.6 1.2 Ω Table 7. Squib deployment drivers and diagnostics - DC electrical characteristics Symbol Parameter Test condition Min. Typ. Max. Unit |
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