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TUSB5052 Datasheet(PDF) 74 Page - Texas Instruments |
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TUSB5052 Datasheet(HTML) 74 Page - Texas Instruments |
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74 / 82 page ![]() 11−2 11.3 Electrical Characteristics Over Recommended Ranges of Operating Free-Air Temperature and Supply Voltage (unless otherwise noted) PARAMETER TEST CONDITIONS MIN MAX UNIT TTL/LVCMOS IOH = −4 mA VCC − 0.5 VOH High-level output voltage USB data lines R(DRV) = 15 kΩ, to GND 2.8 V VOH High-level output voltage USB data lines IOH = − 12 mA (without R(DRV)) VCC − 0.5 V TTL /LVCMOS IOL = 4 mA 0.5 VOL Low-level output voltage USB data lines R(DRV) = 1.5 kΩ to 3.6 V 0.3 V VOL Low-level output voltage USB data lines IOL = 12 mA (without R(DRV)) 0.5 V VIT+ Positive input threshold voltage TTL /LVCMOS 1.8 V VIT+ Positive input threshold voltage Single-ended 0.8 V ≤ VICR ≤ 2.5 V 1.8 V VIT− Negative-input threshold voltage TTL /LVCMOS 0.8 V VIT− Negative-input threshold voltage Single-ended 0.8 V ≤ VICR ≤ 2.5 V 1 V Vhys Input hysteresis† (VT+ − VT−) TTL /LVCMOS 0.3 0.7 V Vhys Input hysteresis† (VT+ − VT−) Single-ended 0.8 V ≤ VICR ≤ 2.5 V 300 500 mV IOZ High-impedance output current TTL/LVCMOS V = VCC or GND‡ ±10 µA IOZ High-impedance output current USB data lines 0 V ≤ VO ≤ VCC ±10 µA IIL Low-level input current TTL/LVCMOS VI = GND −1 µA IIH High-level input current TTL/LVCMOS VI = VCC 1 µA zo(DRV) Driver output impedance USB data lines Static VOH or VOL 7.1 19.9 Ω VID Differential input voltage USB data lines 0.8 V ≤ VICR ≤ 2.5 V 0.2 V † Applies for input buffers with hysteresis ‡ Applies for open drain buffers 11.4 Differential Driver Switching Characteristics Over Recommended Ranges of Operating Free-Air Temperature and Supply Voltage, CL = 50 pF (unless otherwise noted) 11.4.1 Full-Speed Mode PARAMETER TEST CONDITIONS MIN MAX UNIT tr Transition rise time for DP or DM See Figure 11−1 and Figure 11−2 4 20 ns tf Transition fall time for DP or DM See Figure 11−1 and Figure 11−2 4 20 ns t(RFM) Rise/fall time matching§ (tr/tf) × 100 90% 110% VO(CRS) Signal crossover output voltage§ 1.3 2.0 V § Characterized only. Limits are approved by design and are not production tested. 11.4.2 Low-Speed Mode PARAMETER TEST CONDITIONS MIN MAX UNIT tr Transition rise time for DP or DM§ CL = 200 pF to 600 pF, see Figure 11−1 and Figure 11−2 75 300 ns tf Transition fall time for DP or DM§ CL = 200 pF to 600 pF, see Figure 11−1 and Figure 11−2 75 300 ns t(RFM) Rise/fall time matching§ (tr/tf) × 100 80% 120% VO(CRS) Signal crossover output voltage§ CL = 200 pF to 600 pF 1.3 2.0 V § Characterized only. Limits are approved by design and are not production tested. 11.5 Current Consumption, TA = 25°C, VCC = VCCS = 3.3 V ±5%, VSS = 0 OPERATION MIN TYP MAX UNIT Normal operation 45 mA Suspend mode 50 µA |
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