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TUSB5052 Datasheet(PDF) 74 Page - Texas Instruments

Part # TUSB5052
Description  USB TO 2-SERIAL PORT CONTROLLER WITH CONFIGURABLE OPTIONAL HUB
PDF  82 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TUSB5052 Datasheet(HTML) 74 Page - Texas Instruments

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11−2
11.3 Electrical Characteristics Over Recommended Ranges of Operating Free-Air
Temperature and Supply Voltage (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
TTL/LVCMOS
IOH = −4 mA
VCC − 0.5
VOH
High-level output voltage
USB data lines
R(DRV) = 15 kΩ, to GND
2.8
V
VOH
High-level output voltage
USB data lines
IOH = − 12 mA (without R(DRV))
VCC − 0.5
V
TTL /LVCMOS
IOL = 4 mA
0.5
VOL
Low-level output voltage
USB data lines
R(DRV) = 1.5 kΩ to 3.6 V
0.3
V
VOL
Low-level output voltage
USB data lines
IOL = 12 mA (without R(DRV))
0.5
V
VIT+
Positive input threshold voltage
TTL /LVCMOS
1.8
V
VIT+
Positive input threshold voltage
Single-ended
0.8 V
≤ VICR ≤ 2.5 V
1.8
V
VIT−
Negative-input threshold voltage
TTL /LVCMOS
0.8
V
VIT−
Negative-input threshold voltage
Single-ended
0.8 V
≤ VICR ≤ 2.5 V
1
V
Vhys
Input hysteresis† (VT+ − VT−)
TTL /LVCMOS
0.3
0.7
V
Vhys
Input hysteresis† (VT+ − VT−)
Single-ended
0.8 V
≤ VICR ≤ 2.5 V
300
500
mV
IOZ
High-impedance output current
TTL/LVCMOS
V = VCC or GND‡
±10
µA
IOZ
High-impedance output current
USB data lines
0 V
≤ VO ≤ VCC
±10
µA
IIL
Low-level input current
TTL/LVCMOS
VI = GND
−1
µA
IIH
High-level input current
TTL/LVCMOS
VI = VCC
1
µA
zo(DRV) Driver output impedance
USB data lines
Static VOH or VOL
7.1
19.9
VID
Differential input voltage
USB data lines
0.8 V
≤ VICR ≤ 2.5 V
0.2
V
† Applies for input buffers with hysteresis
‡ Applies for open drain buffers
11.4 Differential Driver Switching Characteristics Over Recommended Ranges of
Operating Free-Air Temperature and Supply Voltage, CL = 50 pF (unless otherwise
noted)
11.4.1
Full-Speed Mode
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
tr
Transition rise time for DP or DM
See Figure 11−1 and Figure 11−2
4
20
ns
tf
Transition fall time for DP or DM
See Figure 11−1 and Figure 11−2
4
20
ns
t(RFM)
Rise/fall time matching§
(tr/tf) × 100
90%
110%
VO(CRS) Signal crossover output voltage§
1.3
2.0
V
§ Characterized only. Limits are approved by design and are not production tested.
11.4.2
Low-Speed Mode
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
tr
Transition rise time for DP or DM§
CL = 200 pF to 600 pF, see Figure 11−1 and Figure 11−2
75
300
ns
tf
Transition fall time for DP or DM§
CL = 200 pF to 600 pF, see Figure 11−1 and Figure 11−2
75
300
ns
t(RFM)
Rise/fall time matching§
(tr/tf) × 100
80%
120%
VO(CRS) Signal crossover output voltage§
CL = 200 pF to 600 pF
1.3
2.0
V
§ Characterized only. Limits are approved by design and are not production tested.
11.5 Current Consumption, TA = 25°C, VCC = VCCS = 3.3 V ±5%, VSS = 0
OPERATION
MIN
TYP
MAX
UNIT
Normal operation
45
mA
Suspend mode
50
µA



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