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STA400A Datasheet(PDF) 7 Page - STMicroelectronics |
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STA400A Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 117 page ![]() 7/117 STA400A DC ELECTRICAL CHARACTERISTCS: (Tamb = -40 to +85°C, VDD = AVDD = 1.65 to 1.95V, VDD3 = 3.0 to 3.6V unless otherwise specified). Note 1: Performed on all the input pins excluded the pull-down ones Note 2: Performed on the I/O pins in tristate mode Note 3: Guaranteed by Design Note 4: take into account 200mV voltage drop in supply lines and Input/Output levels for frequency > 20MHz. Note 5. X is the source/sink current under worst case conditions (X = 2 to 4 mA) Note 6: Human body Model Note 7. Guaranteed by Ipd measurements Symbol Parameter Conditions Min Typ Max Unit VDD 1.8V Supply Voltage 1.65 1.8 1.95 V VDD3 3.3V Supply Voltage 3.0 3.3 3.6 V AVDD 1.8V Analog Supply Voltage 1.65 1.8 1.95 V IDD VDD Power Supply Current MCLK = 23.92MHz; sat1, sat2 & terr arms active; VDD=1.95V 130 160 mA IDD3 VDD3 Power Supply Current MCLK = 23.92MHz; sat1, sat2 & terr arms active; VDD3=3.6V 45 90 mA IAVDDsat AVDdsat Power Supply Current MCLK = 23.92MHz; VIN=0.75Vpp; fIN=6.095MHz; AVDdsat=1.95V 16 20 mA IAVDDterr AVDdterr Power Supply Current MCLK = 23.92MHz; VIN=0.75Vpp; fIN=2.99MHz; AVDdterr =1.95V 16 20 mA Pd Power Dissipation MCLK = 23.92MHz; VDD = 1.8V; VDD3 = 3.3V 350 mW Iil Low level input leakage current 1) Vi = 0V 1 µA Iih High level input leakage current 1) Vi = VDD3 1 µA IOZ Tristare output leakage current 2) Vo = 0V or VDD3 1 µA Ipd Pull-down current Vi = VDD3 30 110 µA Rpu Equivalent pull-up resistance 7) Vi = 0V 50 K Ω Rpd Equivalent pull-down resistance 7) Vi = VDD3 50 k Ω Vil Low level input voltage 0.8 V Vih High level input voltage 2 V Vilhyst Low level threshold input falling 0.8 1.35 V Vihhyst High level threshold input rising 1.3 2 V Vhyst Schmitt trigger hysteresis3) 0.3 0.8 V Vol Low level output voltage 4,5) Iol = XmA 0.2 V Voh High level output voltage 4,5) Ioh = XmA 2.8 V Cin Input capacitance 3) 1.2 pF Cout Output Capacitance 3) 1.9 pF Cio I/O (bi-directional) capacitance 3) 2.1 pF Ilatchup I/O Latch-up current 200 mA VESD Electrostatic Protection 6) Leakage<1 µA 4000 V |
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