| Electronic Components Datasheet Search |
|
TUSB1210 Datasheet(PDF) 6 Page - Texas Instruments |
|
|
|
|||||||||||||||||||||||||||||
TUSB1210 Datasheet(HTML) 6 Page - Texas Instruments |
|
6 / 66 page ![]() TUSB1210 SLLSE09H – NOVEMBER 2009 – REVISED JUNE 2015 www.ti.com 4 Specifications 4.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VCC Main battery supply voltage (2) 0 5 V Where supply represents the voltage applied Voltage on any input(3) to the power supply pin associated with the –0.3 1 × VCC +0.3 V input VBUS input –2 20 V ID, DP, DM inputs Stress condition guaranteed 24h –0.3 5.25 V VDDIO IO supply voltage Continuous 1.98 V TA Ambient temperature range –40 85 °C Absolute maximum rating –40 150 TJ Ambient temperature range °C For parametric compliance –40 125 Ambient temperature for parametric With max 125°C as junction temperature –40 85 °C compliance DP, DM or ID pins short circuited to VBUS DP, DM, ID high voltage short circuit supply, in any mode of TUSB1210 operation, 5.25 V continuously for 24 hours DP, DM or ID pins short circuited to GND in DP, DM, ID low voltage short circuit any mode of TUSB1210 operation, 0 V continuously for 24 hours Tstg Storage temperature range –55 125 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Section 4.3 is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) The product will have negligible reliability impact if voltage spikes of 5.5 V occur for a total (cumulative over lifetime) duration of 5 milliseconds. (3) Except VBAT input, VBUS, ID, DP, and DM pads 4.2 ESD Ratings VALUE UNIT Human body model (HBM), per ANSI/ESDA/JEDEC JS001(1) ±2 Electrostatic discharge (ESD) V(ESD) V performance: Charged device model (CDM), per JESD22-C101(2) ±500 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 4.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VBAT Battery supply voltage 2.7 3.6 4.8 V VBAT When VDD33 is supplied internally 3.15 V Battery supply voltage for USB 2.0 compliancy CERT (USB 2.0 certification) When VDD33 is shorted to VBAT externally 3.05 VDDIO Digital IO pin supply 1.71 1.98 V TA Ambient temperature range –40 85 °C 4.4 Thermal Information PARAMETER MEASUREMENT METHOD VALUE UNIT θJA Junction-to-ambient thermal resistance EIA/JESD 51-1 34.72 °C/W θJC top Junction-to-case top thermal resistance(1) No current JEDEC specification(2) 37.3 °C/W (1) Top is surface of the package facing away from the PCB. (2) Refer to measurement method in Chapter 2 of IC Package Thermal Metrics (SPRA953). 6 Specifications Copyright © 2009–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: TUSB1210 |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |