SN10501DBVT datasheet(16/23 Pages) TI

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SN10501

SN10502

SN10503

SLOS408A − MARCH 2003 − REVISED DECEMBER 2003

www.ti.com

Socketing a high speed part like the SN1050x is

not recommended. The additional lead length and

pin-to-pin capacitance introduced by the socket can

create a troublesome parasitic network which can

make it almost impossible to achieve a smooth, stable

frequency response. Best results are obtained by

soldering the SN1050x onto the board.

THERMAL ANALYSIS

The SN1050x family of devices does not incorporate

automatic thermal shutoff protection, so the designer must

take care to ensure that the design does not violate the

absolute maximum junction temperature of the device.

Failure may result if the absolute maximum junction

temperature of 150

_ C is exceeded.

The thermal characteristics of the device are dictated by

the package and the PC board. Maximum power

dissipation for a given package can be calculated using the

following formula.

Dmax +

Tmax–TA

where:

PDmax is the maximum power dissipation in the amplifier (W).

Tmax is the absolute maximum junction temperature (°C).

TA is the ambient temperature (°C).

θJA = θJC + θCA

θJC is the thermal coefficient from the silicon junctions to the

case (

°C/W).

θCA is the thermal coefficient from the case to ambient air

(

°C/W).

1.5

−40

−20

TA − Ambient Temperature − °C

θJA = 170°C/W for 8-Pin SOIC (D)

θJA = 324.1°C/W for 5-Pin SOT−23 (DBV)

TJ = 150°C, No Airflow

Figure 46. Maximum Power Dissipation vs

Ambient Temperature

0.5

8-Pin D Package

1.25

0.25

0.75

5-Pin DBV Package

When determining whether or not the device satisfies the

maximum power dissipation requirement, it is important to

consider not only quiescent power dissipation, but also

dynamic power dissipation. Often maximum power

dissipation is difficult to quantify because the signal pattern

is inconsistent, but an estimate of the RMS power

dissipation can provide visibility into a possible problem.

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