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CCG3PA Datasheet(PDF) 28 Page - Cypress Semiconductor

Part # CCG3PA
Description  USB Type-C Port Controller
PDF  37 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CCG3PA Datasheet(HTML) 28 Page - Cypress Semiconductor

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Document Number: 002-16951 Rev. *F
Page 28 of 37
EZ-PD™ CCG3PA Datasheet
Analog to Digital Converter
Memory
Table 38. VBUS AC Regulator Specifications
Spec ID
Parameter
Description
Min
Typ
Max
Units
Details/Conditions
SID.VREG.3 Tstart
Total startup time for the regulator
supply outputs
–
–
200
µs
Guaranteed by Charac-
terization.
Table 39. ADC DC Specifications (Guaranteed by Characterization)
Spec ID
Parameter
Description
Min
Typ
Max
Units
Details/Conditions
SID.ADC.1
Resolution
ADC resolution
–
8
–
Bits
–
SID.ADC.2
INL
Integral non-linearity
–2.5
–
2.5
LSB Reference voltage
generated from VDDD
SID.ADC.2A INL
Integral non-linearity
–1.5
–
1.5
LSB Reference voltage
generated from bandgap
SID.ADC.3
DNL
Differential non-linearity
–2.5
–
2.5
LSB Reference voltage
generated from VDDD
SID.ADC.3A DNL
Differential non-linearity
–1.5
–
1.5
LSB Reference voltage
generated from bandgap
SID.ADC.4
Gain Error
Gain error
–1.5
–
1.5
LSB
–
SID.ADC.6
VREF_ADC2
ADC reference voltage when
generated from band gap.
1.96
2.0
2.04
V
Reference voltage
generated from bandgap
Table 40. ADC AC Specifications (Guaranteed by Design)
Spec ID
Parameter
Description
Min
Typ
Max
Units
Details/Conditions
SID.ADC.7
SLEW_Max
Rate of change of sampled voltage
signal
––
3
V/ms
–
Table 41. Flash AC Specifications
Spec ID
Parameter
Description
Min Typ Max
Units
Details/Conditions
SID.MEM#3 FLASH_ERASE
Row erase time
–
–
15.5
ms
–40 °C
TA 85 °C, all VDDD
SID.MEM#4 FLASH_WRITE
Row (Block) write time (erase
and program)
–
–
20
ms
–40 °C
TA 85 °C, all VDDD
SID.MEM#8 FLASH_ROW_PGM Row program time after erase
–
–
7
ms
25 °C
TA 55 °C, all VDDD
SID178
TBULKERASE
Bulk erase time (32 KB)
–
–
35
ms
–
SID180
TDEVPROG
Total device program time
–
–
7.5
s
–
SID182
FRET1
Flash retention, TA ≤ 55 °C,
100K P/E cycles
20
–
–
years
–
SID182A
FRET2
Flash retention, TA ≤ 85 °C,
10K P/E cycles
10
–
–
years
–
SID182B
FRET3
Flash retention, TA ≤ 105 °C,
10K P/E cycles
3–
–
years
–



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