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OPA521 Datasheet(PDF) 4 Page - Texas Instruments

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Part # OPA521
Description  Narrowband Power Line Communications Line Driver
PDF  22 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

OPA521 Datasheet(HTML) 4 Page - Texas Instruments

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OPA521
SBOS872 – MAY 2018
www.ti.com
Product Folder Links: OPA521
Submit Documentation Feedback
Copyright © 2018, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Supply voltage, V+
Pins 1, 20
GND + 26
V
Signal input terminals
Voltage
Pins 7, 8, 9, 12
GND – 0.4
V+ +
0.4
V
Pins 11, 15
GND – 0.4
5.5
Current
Pins 7, 8, 9, 11, 12, 15
±10
mA
Signal output terminals
Voltage
Pins 18, 19
GND – 0.4
V+ +
0.4
V
Pins 13, 14
GND – 0.4
5.5
Current; short-circuit to GND
Pins 13, 14, 18, 19
Continuous
Operating temperature, TA
–40
150
°C
Operating junction temperature, TJ
–55
150
°C
Storage temperature, Tstg
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±3000
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2)
±500
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.3 Thermal Information
THERMAL METRIC(1)
OPA521
UNIT
RGW (QFN)
20 PINS
RθJA
Junction-to-ambient thermal resistance
33.7
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
30.4
°C/W
RθJB
Junction-to-board thermal resistance
12.5
°C/W
ΨJT
Junction-to-top characterization parameter
0.5
°C/W
ΨJB
Junction-to-board characterization parameter
12.5
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
2.5
°C/W
6.4
Electrical Characteristics
at TCASE = 25°C, V+ = 15 V, IN+ = (V+) / 2, RLOAD 50 Ω, (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
NOISE



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