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OPA521 Datasheet(PDF) 4 Page - Texas Instruments |
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OPA521 Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 22 page ![]() 4 OPA521 SBOS872 – MAY 2018 www.ti.com Product Folder Links: OPA521 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply voltage, V+ Pins 1, 20 GND + 26 V Signal input terminals Voltage Pins 7, 8, 9, 12 GND – 0.4 V+ + 0.4 V Pins 11, 15 GND – 0.4 5.5 Current Pins 7, 8, 9, 11, 12, 15 ±10 mA Signal output terminals Voltage Pins 18, 19 GND – 0.4 V+ + 0.4 V Pins 13, 14 GND – 0.4 5.5 Current; short-circuit to GND Pins 13, 14, 18, 19 Continuous Operating temperature, TA –40 150 °C Operating junction temperature, TJ –55 150 °C Storage temperature, Tstg 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±3000 V Charged-device model (CDM), per JEDEC specification JESD22- C101(2) ±500 (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.3 Thermal Information THERMAL METRIC(1) OPA521 UNIT RGW (QFN) 20 PINS RθJA Junction-to-ambient thermal resistance 33.7 °C/W RθJC(top) Junction-to-case (top) thermal resistance 30.4 °C/W RθJB Junction-to-board thermal resistance 12.5 °C/W ΨJT Junction-to-top characterization parameter 0.5 °C/W ΨJB Junction-to-board characterization parameter 12.5 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 2.5 °C/W 6.4 Electrical Characteristics at TCASE = 25°C, V+ = 15 V, IN+ = (V+) / 2, RLOAD 50 Ω, (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT NOISE |
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