2

RF Device Data

NXP Semiconductors

MMRF2010N MMRF2010GN

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

(Top View)

Quiescent Current

and Thermal Sense

Note: Exposed backside of the package is

the source terminal for the transistor.

N.C.

N.C.

1

2

3

4

7

8

14

N.C.

9

10

11

Thermal Sense

13

6

12

5

Thermal Sense

Stage 1

Stage 2

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

–0.5, +100

Vdc

Gate--Source Voltage

–6, +10

Vdc

Operating Voltage

50, +0

Vdc

Storage Temperature Range

–65 to +150

°C

Case Operating Temperature Range

–55 to 150

°C

–55 to 225

°C

Input Power

25

dBm

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Impedance, Junction to Case

Pulse: Case Temperature 81°C, 250 W Peak, 128 μsec Pulse Width, 10% Duty

Cycle, 1090 MHz

1.1

0.15

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Class 2, passes 2500 V

Machine Model (per EIA/JESD22--A115)

Class A, passes 150 V

Charge Device Model (per JESD22--C101)

Class II, passes 200 V

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3

260

°C

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current

2. Continuous use at maximum temperature will affect MTTF.