MMRF2010N MMRF2010GN

1

RF Device Data

NXP Semiconductors

RF LDMOS Wideband Integrated

Power Amplifiers

The MMRF2010N is a 2 -- stage RFIC designed for IFF transponder

applications operating from 1030 to 1090 MHz. These devices are suitable for

use in pulse applications such as IFF and secondary radar transponders.

Frequency

Signal Type

(W)

(dB)

2nd Stage Eff.

(%)

1030

Pulse

(128 μsec, 10% Duty Cycle)

250 Peak

34.1

61.0

1090

33.4

61.9

1030

Pulse

(2 msec, 20% Duty Cycle)

250 Peak

33.6

61.5

1090

32.6

62.9

Frequency

(MHz)

Signal Type

(W)

(dB)

2nd Stage Eff.

(%)

Pulse

(128 μsec, 10% Duty Cycle)

250 Peak

32.1

61.4

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal Type

VSWR

(W)

Test

Voltage

Result

Pulse

(2 msec, 20%

Duty Cycle)

> 20:1 at all

Phase Angles

0.316 W

Peak

(3 dB

Overdrive)

52

No Device

Degradation

1. Measured in 1030–1090 MHz reference circuit.

2. Measured in 1090 MHz narrowband test circuit.

Features

• Characterized over 1030–1090 MHz

• On--chip input (50 ohm) and interstage matching

• Single ended

• Integrated ESD protection

• Low thermal resistance

• Integrated quiescent current temperature compensation with

Typical Applications

• Driver PA for high power pulse applications

• IFF and secondary radar

3. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control

Document Number: MMRF2010N

Rev. 1, 04/2017

NXP Semiconductors

Technical Data

1030–1090 MHz, 250 W PEAK, 50 V

RF LDMOS INTEGRATED

POWER AMPLIFIERS

MMRF2010N

MMRF2010GN

TO--270WB--14

PLASTIC

MMRF2010N

TO--270WBG--14

PLASTIC

MMRF2010GN

© 2015, 2017 NXP B.V.