MMRF2010N datasheet(3/23 Pages) NXP

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MMRF2010N MMRF2010GN

RF Device Data

NXP Semiconductors

Table 5. Electrical Characteristics (TA =25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 -- Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 100 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS =55 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

Gate--Source Leakage Current

(VGS =1.5 Vdc, VDS =0 Vdc)

IGSS

—

μAdc

Stage 1 -- On Characteristics

Gate Threshold Voltage

(VDS =10 Vdc, ID =52 μAdc)

VGS(th)

1.3

1.8

2.3

Vdc

Fixture Gate Quiescent Voltage

(VDD =50 Vdc, IDQ1 = 80 mAdc, Measured in Functional Test)

VGG(Q)

6.0

7.0

8.0

Vdc

Stage 2 -- Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 100 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS =55 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

Gate--Source Leakage Current

(VGS =1.5 Vdc, VDS =0 Vdc)

IGSS

—

μAdc

Stage 2 -- On Characteristics

Gate Threshold Voltage

(VDS =10 Vdc, ID = 528 μAdc)

VGS(th)

1.3

1.8

2.3

Vdc

Fixture Gate Quiescent Voltage

(VDD =50 Vdc, IDQ2 = 150 mAdc, Measured in Functional Test)

VGG(Q)

2.2

2.7

3.2

Vdc

Drain--Source On--Voltage

(VGS =10 Vdc, ID =1.6 Adc)

VDS(on)

—

0.25

—

Vdc

Functional Tests (1,2) (In NXP Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ1 =80 mA, IDQ2 = 150 mA, Pout = 250 W Peak

(25 W Avg.), f = 1090 MHz, 128 μsec Pulse Width, 10% Duty Cycle

Power Gain

Gps

30.5

32.1

34.0

2nd Stage Drain Efficiency

ηD

57.0

61.4

—

Load Mismatch/Ruggedness (In NXP Test Fixture, 50 ohm system) IDQ1 =80 mA, IDQ2 = 150 mA

Frequency

(MHz)

Signal

Type

VSWR

(W)

Test Voltage, VDD

Result

1090

Pulse

(128 μsec,

10% Duty

Cycle)

> 10:1 at all Phase Angles

0.345 W Peak

(3 dB Overdrive)

No Device Degradation

Table 6. Ordering Information

Device

Tape and Reel Information

Package

MMRF2010NR1

R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel

TO--270WB--14

MMRF2010GNR1

TO--270WBG--14

1. Part internally input matched.

2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing

(GN) parts.

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