MMRF2010N datasheet(13/23 Pages) NXP

13 / 23 page

MMRF2010N MMRF2010GN

RF Device Data

NXP Semiconductors

TYPICAL CHARACTERISTICS — 1090 MHz

NARROWBAND PRODUCTION TEST FIXTURE

Pin, INPUT POWER (dBm) PEAK

1090

265

284

(MHz)

P1dB

(W)

P3dB

(W)

Figure 16. Output Power versus Input Power

VDD =50 Vdc,IDQ1 =80 mA, IDQ2 = 150 mA

f = 1090 MHz, Pulse Width = 128 μsec, 10% Duty Cycle

Pout, OUTPUT POWER (WATTS) PEAK

Figure 17. Power Gain and Drain Efficiency

versus Output Power and Quiescent Current

100

500

ηD

Gps

VDD =50 Vdc,IDQ1 =80 mA, IDQ2 = 150 mA

f = 1090 MHz, Pulse Width = 128 μsec, 10% Duty Cycle

100

500

Pout, OUTPUT POWER (WATTS) PEAK

Figure 18. Power Gain and Drain Efficiency

versus Output Power

25_C

TC = –55_C

85_C

25_C

–55_C

Gps

ηD

VDD =50 Vdc,IDQ1 =80 mA, IDQ2 = 150 mA

f = 1090 MHz, Pulse Width = 128 μsec

10% Duty Cycle

Pout, OUTPUT POWER (WATTS) PEAK

Figure 19. Power Gain versus Output Power

and Drain--Source Voltage

150

200

250

300

VDD =30 V

100

35 V

350

40 V

45 V

50 V

IDQ1 =80 mA, IDQ2 = 150 mA

f = 1090 MHz, Pulse Width = 128 μsec

10% Duty Cycle

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