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MMRF2010N Datasheet(PDF) 4 Page - NXP Semiconductors |
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MMRF2010N Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 23 page ![]() 4 RF Device Data NXP Semiconductors MMRF2010N MMRF2010GN TYPICAL CHARACTERISTICS Figure 3. Normalized IDQ versus Case Temperature TC, CASE TEMPERATURE (°C) 1.20 1.15 1.05 1.10 1.00 0.95 0.90 0.85 0.80 100 –75 –50 0 50 75 –0.000 Slope (mA/°C) +0.143 IDQ1 IDQ2 IDQ2 IDQ1 –25 25 VDD =50 Vdc IDQ1 =80 mA IDQ2 = 150 mA 250 109 90 TJ, JUNCTION TEMPERATURE (°C) 107 106 105 110 130 150 170 190 210 230 108 ID =6.52 Amps 8.30 Amps 9.36 Amps VDD =50 Vdc Pulse Width = 128 μsec 10% Duty Cycle Figure 4. MTTF versus Junction Temperature -- Pulse Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.nxp.com/RF/calculators. Note: Performance measured in reference circuit. |
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