THS4541 datasheet(4/64 Pages) TI1

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THS4541-Q1

SLOS930B – NOVEMBER 2015 – REVISED NOVEMBER 2019

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Voltage

Supply voltage, (Vs+) – Vs–

5.5

Input/output voltage range

(Vs–) – 0.5

(Vs+) + 0.5

Differential input voltage

±1

Current

Continuous input current

±20

Continuous output current

±80

Continuous power dissipation

See Thermal Information table and Thermal Analysis section

Temperature

Maximum junction

150

°C

Operating free-air

–40

125

Storage, Tstg

–65

150

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per AEC Q100-002(1)

±2000

Charged-device model (CDM), per AEC Q100-011

±1000

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Vs+

Single-supply voltage

2.7

5.4

Ambient temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC package thermal metrics application

report.

7.4 Thermal Information

THERMAL METRIC(1)

THS4541-Q1

THS4541W-Q1

UNIT

RGT (VQFN)

16 PINS

RθJA

Junction-to-ambient thermal resistance

56.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

°C/W

RθJB

Junction-to-board thermal resistance

30.4

°C/W

ψJT

Junction-to-top characterization parameter

2.7

3.5

°C/W

ψJB

Junction-to-board characterization parameter

30.4

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

9.3

14.2

°C/W

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