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PR533 Datasheet(PDF) 19 Page - NXP Semiconductors

Part # PR533
Description  USB NFC integrated reader solution
PDF  36 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PR533 Datasheet(HTML) 19 Page - NXP Semiconductors

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PR533_SDS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product short data sheet
COMPANY PUBLIC
Rev. 3.6 — 27 October 2014
206436
19 of 36
NXP Semiconductors
PR533
USB NFC integrated reader solution
[1]
The value does not guarantee the power-down consumptions. To reach the specified power-down consumptions, the limit is
VDD(PVDD)  0.4 V.
[2]
The value does not guarantee the power-down consumptions. To reach the specified power-down consumptions, the limit is 0.4 V.
[1]
The IOH and IOL give the output driving capability and allow to calculate directly the rise and fall time as function of the load capacitance
Table 21.
Input Pin characteristics for DP for HSU interface
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIH
HIGH-level input voltage
[1] 0.7
 V
DD(PVDD)
-VDD(PVDD)
V
VIL
LOW-level input voltage
[2] 0-
0.3
 V
DD(PVDD)
V
IIH
HIGH-level input current
Vi = VDD(PVDD)
--
1
mA
IIL
LOW-level input current
Vi = 0 V
-
-
1
mA
ILI
input leakage current
RSTPD_N = 0 V
11
mA
Ci
input capacitance
-
2.5
3.5
pF
Table 22.
Output Pin characteristics for DM for HSU interface
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VOH
HIGH-level output
voltage
VDD(PVDD) =3V; IOH = 4 mA
VDD(PVDD)  0.4 -
VDD(PVDD)
V
VDD(PVDD) =1.8 V; IOH = 2 mA
VDD(PVDD)  0.4 -
VDD(PVDD)
V
VOL
LOW-level output volt-
age
VDD(PVDD) =3V; IOL = 4 mA
0
-
0.4
V
VDD(PVDD) =1.8 V; IOL = 2 mA
0
-
0.4
V
IOH
HIGH-level output
current
VDD(PVDD) =3V;
VOH =0.8  VDD(PVDD)
[1]
4-
-
mA
VDD(PVDD) =1.8 V;
VOH =0.7  VDD(PVDD)
2-
-
mA
IOL
LOW-level output cur-
rent
VDD(PVDD) =3.3 V;
VOL =0.2  VDD(PVDD)
[1] 4-
-
mA
VDD(PVDD) =1.8 V;
VOL =0.3  VDD(PVDD)
2-
-
mA
ILI
input leakage current
RSTPD_N = 0 V
1-
1
mA
CL
load capacitance
-
-
30
pF
tr
rise time
VDDP =3V;
VOH =0.8  VDD(PVDD);
CL =30 pF
-
-
13.5
ns
VDD(PVDD) =1.8 V;
VOH =0.7  VDD(PVDD);
CL =30 pF
-
-
10.8
ns
tf
fall time
VDD(PVDD) =3V;
VOL =0.2  VDD(PVDD);
CL=30pF
-
-
13.5
ns
VDDP =1.8 V;
VOL =0.3  VDD(PVDD);
CL =30 pF
-
-
10.8
ns



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