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PR533 Datasheet(PDF) 19 Page - NXP Semiconductors |
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PR533 Datasheet(HTML) 19 Page - NXP Semiconductors |
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19 / 36 page ![]() PR533_SDS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product short data sheet COMPANY PUBLIC Rev. 3.6 — 27 October 2014 206436 19 of 36 NXP Semiconductors PR533 USB NFC integrated reader solution [1] The value does not guarantee the power-down consumptions. To reach the specified power-down consumptions, the limit is VDD(PVDD) 0.4 V. [2] The value does not guarantee the power-down consumptions. To reach the specified power-down consumptions, the limit is 0.4 V. [1] The IOH and IOL give the output driving capability and allow to calculate directly the rise and fall time as function of the load capacitance Table 21. Input Pin characteristics for DP for HSU interface Symbol Parameter Conditions Min Typ Max Unit VIH HIGH-level input voltage [1] 0.7 V DD(PVDD) -VDD(PVDD) V VIL LOW-level input voltage [2] 0- 0.3 V DD(PVDD) V IIH HIGH-level input current Vi = VDD(PVDD) -- 1 mA IIL LOW-level input current Vi = 0 V - - 1 mA ILI input leakage current RSTPD_N = 0 V 11 mA Ci input capacitance - 2.5 3.5 pF Table 22. Output Pin characteristics for DM for HSU interface Symbol Parameter Conditions Min Typ Max Unit VOH HIGH-level output voltage VDD(PVDD) =3V; IOH = 4 mA VDD(PVDD) 0.4 - VDD(PVDD) V VDD(PVDD) =1.8 V; IOH = 2 mA VDD(PVDD) 0.4 - VDD(PVDD) V VOL LOW-level output volt- age VDD(PVDD) =3V; IOL = 4 mA 0 - 0.4 V VDD(PVDD) =1.8 V; IOL = 2 mA 0 - 0.4 V IOH HIGH-level output current VDD(PVDD) =3V; VOH =0.8 VDD(PVDD) [1] 4- - mA VDD(PVDD) =1.8 V; VOH =0.7 VDD(PVDD) 2- - mA IOL LOW-level output cur- rent VDD(PVDD) =3.3 V; VOL =0.2 VDD(PVDD) [1] 4- - mA VDD(PVDD) =1.8 V; VOL =0.3 VDD(PVDD) 2- - mA ILI input leakage current RSTPD_N = 0 V 1- 1 mA CL load capacitance - - 30 pF tr rise time VDDP =3V; VOH =0.8 VDD(PVDD); CL =30 pF - - 13.5 ns VDD(PVDD) =1.8 V; VOH =0.7 VDD(PVDD); CL =30 pF - - 10.8 ns tf fall time VDD(PVDD) =3V; VOL =0.2 VDD(PVDD); CL=30pF - - 13.5 ns VDDP =1.8 V; VOL =0.3 VDD(PVDD); CL =30 pF - - 10.8 ns |
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