MPC5777C datasheet(13/90 Pages) NXP

13 / 90 page

Table 4. DC electrical specifications (continued)

Symbol

Parameter

Conditions

Value

Unit

Min

Typ

Max

ISTBY

Standby RAM supply current

1.08 V, TJ = 150°C

—

1140

μA

1.25 V to 5.5 V, TJ = 150°C

1170

1.25 V to 5.5 V, TJ = 85°C

360

1.25 V to 5.5 V, TJ = 40°C

—

120

IDD_PWR

Operating current on the VDDPWR supply

—

IBG_REF

Bandgap reference current consumption3

—

600

μA

ITRNG

True Random Number Generator current

—

2.1

1. IDD measured on an application-specific pattern with all cores enabled at full frequency, TJ = 40°C to 150°C. Flash memory

program/erase current on the VDD supply not included.

2. This value is considering the use of the internal core regulator with the simulation of an external transistor with the

minimum value of hFE of 60.

3. This bandgap reference is for EQADC calibration and Temperature Sensors.

3.6 I/O pad specifications

The following table describes the different pad types on the chip.

Table 5. I/O pad specification descriptions

Pad type

Description

General-purpose I/O

pads

General-purpose I/O and EBI data bus pads with four selectable output slew rate settings; also

called SR pads

EBI pads

Provide necessary speed for fast external memory interfaces on the EBI CLKOUT, address, and

control signals; also called FC pads

LVDS pads

Low Voltage Differential Signal interface pads

Input-only pads

Low-input-leakage pads that are associated with the ADC channels

NOTE

Each I/O pin on the device supports specific drive

configurations. See the signal description table in the device

reference manual for the available drive configurations for each

I/O pin.

NOTE

Throughout the I/O pad specifications, the symbol VDDEx

represents all VDDEx and VDDEHx segments.

Electrical characteristics

MPC5777C Microcontroller Data Sheet Data Sheet, Rev. 14, 01/2020.

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