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LT8335 Datasheet(PDF) 10 Page - Analog Devices

Part # LT8335
Description  40V, 1.2A Micropower Synchronous Boost Converter with PassThru
PDF  20 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LT8335 Datasheet(HTML) 10 Page - Analog Devices

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LT8338
10
Rev. 0
For more information www.analog.com
APPLICATIONS INFORMATION
Programming VIN Turn-On and Turn-Off Thresholds
with the EN/UVLO Pin
The LT8338 is in shutdown when the EN/UVLO pin is
low. The falling threshold of the EN comparator is 1V,
with 50mV of hysteresis. The EN pin can be tied to VIN if
the shutdown feature is not used, or tied to a logic level
if shutdown control is required. The LT8338 draws very
low shutdown quiescent current (0.2µA typ) When EN/
UVLO is below 0.3V.
Adding a resistor divider from VIN to EN/UVLO programs
the LT8338 to regulate the output only when VIN is above
a desired voltage. Typically, this threshold, VIN(EN), is used
in situations where the input supply is current limited, or
has a relatively high source resistance. A switching reg-
ulator draws constant power from the source, so source
current increases as source voltage drops. This looks like
a negative resistance load to the source and can cause
the source to current limit or latch low under low source
voltage conditions. The VIN(EN) threshold prevents the
regulator from operating at source voltages where the
problems might occur. This threshold can be adjusted by
setting the values R3 and R4 (refer to the Block Diagram)
such that they satisfy Equation 1.
VIN,FALLING = 1V •
(R3+R4)
R3
VIN,RISING = 40mV •
(R3+R4)
R3
+ VIN,FALLING
(1)
When operating in Burst Mode operation for light load
applications, the current through the R3 and R4 resis-
tor network can easily be greater than the supply current
consumed by the LT8338. Therefore, R3 and R4 should
be large to minimize their effect on efficiency at low loads.
INTVCC Regulator
An internal low dropout (LDO) regulator produces the
2.6V supply from VIN that powers the drivers and the
internal bias circuitry. INTVCC can supply enough cur-
rent for the LT8338’s circuitry and must be bypassed
to ground with a minimum of 2.2μF low ESR ceramic
capacitor. Good bypassing is necessary to supply the
high transient currents required by the power MOSFET
gate drivers. Applications with high VIN voltage and high
switching frequency will increase die temperature due to
the higher power dissipation across the LDO. The INTVCC
falling threshold (to stop switching and reset soft-start)
is typically 2.2V, and the rising threshold is 2.3V. Do not
connect an external load to the INTVCC pin.
Achieving Ultralow Quiescent Current
When LT8338 is set for Burst Mode operation to enhance
efficiency at light loads, the minimum peak inductor cur-
rent is set to approximately 300mA even though VC node
indicates a lower value (refer to the Block Diagram). In
Burst Mode operation, the LT8338 delivers single pulses
of current to the output capacitor followed by sleep peri-
ods where the output power is supplied by the output
capacitor. That is, at light load condition, the LT8338
maintains the output regulation voltage by reducing the
switching frequency instead of reducing the inductor peak
current.
As the output load decreases, the frequency of single cur-
rent pulses decreases (see Figure 1) and the percentage of
time the LT8338 is in sleep mode increases, resulting in
much higher light load efficiency than typical converters.
By maximizing the time between pulses, the converter
quiescent current approaches 6μA for a typical application
when there is no output load. In addition, if high light load
efficiency is desired, a larger inductor value should be
chosen. See the Burst Mode Efficiency vs Inductor Value
curve in the Typical Performance Characteristics.
Figure 1. Burst Mode Frequency vs Load
V
OUT = 24V, L = 10µH
VIN = 3V
VIN = 6V
VIN =12V
VIN = 18V
VIN = 21V
LOAD CURRENT (mA)
1
10
100
1k
0.001
0.01
0.1
1
3
8338 F01



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