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AT45DB021E Datasheet(PDF) 18 Page - Dialog Semiconductor

Part # AT45DB021E
Description  2-Mbit DataFlash (with Extra 64 kbits) 1.65 V Minimum SPI Serial Flash Memory
PDF  74 Pages
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Manufacturer  DIALOG [Dialog Semiconductor]
Direct Link  http://www.dialog-semiconductor.com/
Logo DIALOG - Dialog Semiconductor

AT45DB021E Datasheet(HTML) 18 Page - Dialog Semiconductor

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AT45DB021E
DS-AT45DB021E—8789J—03/2021
When a low-to-high transition occurs on the CS pin, the device erases the selected block of eight pages. The erase
operation is internally self-timed and takes place in a maximum time of tBE. During this time, the RDY/BUSY bit in
the Status Register indicates that the device is busy.
The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase
properly. If an erase error arises, it is indicated by the EPE bit in the Status Register.
Table 7-1.
Block Erase Addressing
7.8
Sector Erase
The Sector Erase command can be used to individually erase any sector in the main memory.
The main memory array is comprised of nine sectors, and only one sector can be erased at a time. To perform an
erase of Sector 0a or Sector 0b with the standard DataFlash page size (264 bytes), an opcode of 7Ch must be
clocked into the device followed by three address bytes comprised of five dummy bits, seven page address bits
(PA9 - PA3), and 12 dummy bits. To perform a Sector 1-7 erase, an opcode of 7Ch must be clocked into the device
followed by three address bytes comprised of five dummy bits, three page address bits (PA9 - PA7), and 16
dummy bits.
To perform a Sector 0a or Sector 0b erase with the binary page size (256 bytes), an opcode of 7Ch must be
clocked into the device followed by three address bytes comprised of six dummy bits, seven page address bits
(A17 - A11), and 11 dummy bits. To perform a Sector 1-7 erase, an opcode of 7Ch must be clocked into the device
followed by six dummy bits, three page address bits (A17 - A15), and 15 dummy bits.
The page address bits are used to specify any valid address location within the sector is to be erased. When a low-
to-high transition occurs on the CS pin, the device erases the selected sector. The erase operation is internally
self-timed and takes place in a maximum time of tSE. During this time, the RDY/BUSY bit in the Status Register
indicates that the device is busy.
The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase
properly. If an erase error arises, it is indicated by the EPE bit in the Status Register.
PA9/A17
PA8/A16
PA7/A15
PA6/A14
PA5/A13
PA4/A12
PA3/A11
PA2/A10
PA1/A9
PA0/A8
Block
0
0
0
0
0
0
0
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X
X
0
0
0
0
0
0
0
1
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1
0
0
0
0
0
1
0
X
X
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2
0
0
0
0
0
1
1
X
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3
1
1
1
1
1
0
0
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124
1
1
1
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0
1
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125
1
1
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0
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126
1
1
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127



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