AT45DB021E datasheet(2/74 Pages) DIALOG

2 / 74 page

DS-AT45DB021E--8789J--3/2021

AT45DB021E

2-Mbit DataFlash (with Extra 64 kbits)

1.65 V Minimum SPI Serial Flash Memory

Features



Single 1.65 V - 3.6 V supply



Serial Peripheral Interface (SPI) compatible

- Supports SPI modes 0 and 3

- Supports RapidS™ operation



Continuous read capability through entire array

- Up to 85 MHz

- Low-power read option up to 15 MHz

- Clock-to-output time (tV) of 6 ns maximum



User-configurable page size

- 256 bytes per page

- 264 bytes per page (default)

- Page size can be factory pre-configured for 256 bytes



One SRAM data buffer (256/264 bytes)



Flexible programming options

- Byte/Page Program (1 to 256/264 bytes) directly into main memory

- Buffer Write

- Buffer to Main Memory Page Program



Flexible erase options

- Page Erase (256/264 bytes)

- Block Erase (2 kB)

- Sector Erase (32 kB)

- Chip Erase (2 Mbits)



Program and Erase Suspend/Resume



Advanced hardware and software data protection features

- Individual sector protection

- Individual sector lockdown to make any sector permanently read-only



128-byte, One-Time Programmable (OTP) Security Register

- 64 bytes factory programmed with a unique identifier

- 64 bytes user programmable



Hardware and software controlled reset options



JEDEC Standard Manufacturer and Device ID Read



Low power dissipation

- 200 nA Ultra-Deep Power-Down current (typical)

- 3 µA Deep Power-Down current (typical)

- 25 µA Standby current (typical @ 20 MHz)

- 4.5 mA Active Read current (typical))



Endurance: 100,000 program/erase cycles per page minimum



Data retention: 20 years



Complies with full industrial temperature range



Green (Pb/Halide-free/RoHS compliant) packaging options

- 8-lead SOIC (0.150" wide and 0.208" wide)

- 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)

- 8-ball (6 x 4 Array) Wafer Level Chip Scale Package

- Die in Wafer Form

AT45DB021E Datasheet(PDF) 2 Page - Dialog Semiconductor

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