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DS1877 Datasheet(PDF) 22 Page - Maxim Integrated Products |
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DS1877 Datasheet(HTML) 22 Page - Maxim Integrated Products |
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22 / 65 page ![]() 22 Maxim Integrated SFP Controller for Dual Rx Interface DS1877 To prevent address wrapping from occurring, the master must send a STOP condition at the end of the page, then wait for the bus-free or EEPROM write time to elapse. Then the master can generate a new START condition and write the slave address byte (R/W = 0) and the first memory address of the next memory row before continuing to write data. Acknowledge Polling: Any time a EEPROM page is written, the device requires the EEPROM write time (tWR) after the STOP condition to write the contents of the page to EEPROM. During the EEPROM write time, the device does not acknowledge its slave address because it is busy. It is possible to take advantage of that phenomenon by repeatedly addressing the device, which allows the next page to be written as soon as the device is ready to receive the data. The alternative to acknowledge polling is to wait for maxi- mum period of tWR to elapse before attempting to write again to the device. EEPROM Write Cycles: When EEPROM writes occur, the device writes the whole EEPROM memory page, even if only a single byte on the page was modified. Writes that do not modify all 8 bytes on the page are allowed and do not corrupt the remaining bytes of memory on the same page. Because the whole page is written, bytes on the page that were not modified during the transaction are still subject to a write cycle. This can result in a whole page being worn out over time by writing a single byte repeatedly. Writing a page 1 byte at a time wears the EEPROM out 8x faster than writing the entire page at once. The device’s EEPROM write cycles are specified in the Nonvolatile Memory Characteristics table. The speci- fication shown is at the worst-case temperature. It can handle approximately 10x that many writes at room temperature. Writing to SRAM-shadowed EEPROM memory with SEEB = 1 does not count as a EEPROM write cycle when evaluating the EEPROM’s estimated lifetime. Figure 13. Example I2C Timing START START STOP SLAVE ACK SLAVE ACK STOP SINGLE-BYTE WRITE -WRITE 00h TO REGISTER BAh TWO-BYTE WRITE -WRITE 01h AND 75h TO REGISTERS C8h AND C9h SINGLE-BYTE READ -READ REGISTER BAh TWO-BYTE READ -READ C8h AND C9h REPEATED START MASTER NACK 1 0 1 0 0 0 1 0 A2h 1 0 1 1 1 0 1 0 BAh SLAVE ACK START SLAVE ACK 1 0 1 0 0 0 1 0 A2h 1 0 1 0 0 0 1 1 A3h 1 0 1 1 1 0 1 0 BAh SLAVE ACK SLAVE ACK STOP 0 0 0 0 0 0 0 0 00h STOP SLAVE ACK STOP 0 1 1 1 0 1 0 1 75h START SLAVE ACK 1 0 1 0 0 0 1 0 A2h 1 1 0 0 1 0 0 0 C8h SLAVE ACK SLAVE ACK 0 0 0 0 0 0 0 1 01h SLAVE ACK DATA IN BAh DATA REPEATED START MASTER ACK START SLAVE ACK 1 0 1 0 0 0 1 0 A2h 1 0 1 0 0 0 1 1 A3h 1 1 0 0 1 0 0 0 C8h SLAVE ACK SLAVE ACK DATA IN C8h DATA MASTER NACK DATA IN C9h DATA EXAMPLE I2C TRANSACTIONS WITH A2h AS THE MAIN MEMORY DEVICE ADDRESS *IF ASEL IS 0, THE SLAVE ADDRESS IS A0h FOR THE AUXILIARY MEMORY AND A2h/B2h FOR THE MAIN MEMORY. IF ASEL = 1, THE SLAVE ADDRESS IS DETERMINED BY TABLE 02h, REGISTER 8Bh FOR THE MAIN MEMORY. THE AUXILIARY MEMORY CONTINUES TO BE ADDRESSED AT A0h, EXCEPT WHEN THE PROGRAMMED ADDRESS FOR THE MAIN MEMORY IS A0h. TYPICAL I2C WRITE TRANSACTION A) C) B) D) MSB LSB b7 b6 b5 b4 b3 b2 b1 b0 REGISTER ADDRESS MSB LSB b7 b6 b5 b4 b3 b2 b1 b0 DATA SLAVE ACK SLAVE ACK SLAVE ADDRESS* X X X X 0 0 1 R/W MSB LSB READ/ WRITE |
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