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LTC4261 Datasheet(PDF) 17 Page - Analog Devices |
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LTC4261 Datasheet(HTML) 17 Page - Analog Devices |
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17 / 74 page ![]() LTC4283 17 Rev. B For more information www.analog.com OPERATION The LTC4283 is designed to turn a board’s supply voltage on and off in a controlled manner, allowing the board to be safely inserted or removed from a live, power sys- tem. In normal operation after a startup debounce delay, the LTC4283 turns on the external N-channel MOSFET, passing the power to the load. The inrush control dur- ing startup is configurable between two methods. One is programmable active current limiting with an adjustable foldback factor. The other is constant dV/dt ramp control of the output voltage using a capacitor connected between RAMP and VEE. The inrush current is a function of the RAMP capacitor, the load capacitor and the attenuated load voltage seen between RTNS and DRNS. An 11.5V shunt regulator on VIN powers the LTC4283 with an external dropping resistor from the system RTN node. It also provides the gate drive. An optional buffer transistor driven by VZ boosts sourcing capability to sup- ply external loads. An internally generated 5V supply on INTVCC supplies the logic control circuits, communication interface, data converters and EEPROM. Prior to turning on the MOSFET, both VIN and INTVCC voltages must exceed their under- voltage lockout thresholds. In addition, the control inputs UVH, UVL, OV, EN#, PGIO3 and PGIO4 are monitored by comparators. The MOSFET is held off until all startup con- ditions are met. The DRAIN, RTNS − DRNS and GATE voltages are moni- tored to determine if power is available for the load. Two power good signals are sequenced on PGIO1 and PGIO2, each with a delay that is twice the startup debounce delay. Additionally, PGIO3 serves as a watchdog input to monitor the output of the DC/DC module. If the module output fails to come up, the LTC4283 turns off the MOSFET. PGIO4 defaults as an external fault input (inverted). PGIO1-4 can also be configured into general purpose inputs or outputs. An overcurrent fault at the output may result in excessive MOSFET power dissipation during Active Current Limiting (ACL). To limit this power, the ACL amplifier regulates the SENSE+ – SENSE− voltage at precise, programmable values (15mV to 30mV in 1mV steps). When the output voltage is low, power dissipation is further reduced by folding back the current limit, with the foldback ratio con- figurable to 10%, 20%, or 50% of nominal. In the event of a catastrophic output short when the sensed current is twice of the current limit, fast response comparator immediately pulls the GATE pin down with 2.3A. When active current limiting is engaged, TMR is pulled up by a current that is proportional to the power dissipation in the MOSFET. With an RC network representing the ther- mal behavior of the MOSFET connected between TMR and VEE, the TMR voltage is proportional to the temperature rise in the MOSFET. When TMR voltage reaches its thresh- old of 2.048V (representing TJ(MAX) of the MOSFET), the overcurrent fault is logged and GATE turns off, allowing protection of the MOSFET based on true SOA. TMR can also be configured to drive a single capacitor. Following the overcurrent fault, the LTC4283 can either latch off the MOSFET or auto-retry after a cooling delay. Both the retry delay and the number of retries are configurable, too. The LTC4283 also logs and responds to other faults including overvoltage, undervoltage, FET bad, Power Good Input (PGI) fault, FET short and external fault. Included in the LTC4283 is a pair of analog to digital con- verters (ADCs). The ADCs are configurable from 8-bit at 1kHz to 16-bit at 1Hz in five settings. As shown in the Block Diagram, ADC1 continuously monitors the current sense voltage between SENSE+ and SENSE−. ADC2 is syn- chronized to ADC1 and measures the attenuated input voltage at RTNS or the attenuated MOSFET drain voltage at DRNS plus one of the fourteen auxiliary inputs. Every time the ADCs finish taking a measurement, the current sense voltage is multiplied by the measurement of the RTNS or DRNS voltage to provide a power measurement. Every time power is measured, it is added to an energy accumulator that tracks the input energy or the energy consumption of the MOSFET. The energy accumulator can generate an optional alert upon overflow, and can |
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