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LTC4261 Datasheet(PDF) 22 Page - Analog Devices |
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LTC4261 Datasheet(HTML) 22 Page - Analog Devices |
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22 / 74 page ![]() LTC4283 22 Rev. B For more information www.analog.com APPLICATIONS INFORMATION Inrush Control Inrush current control can be configured in two ways. First, if the DVDT bit in CONTROL_1 register 0x0A is set to 1, the inrush current is controlled in dV/dt mode by an external capacitor connected between RAMP and VEE (the RAMP capacitor, CR), as shown in Figure 6. In dV/dt mode, the inrush current is limited by controlling a con- stant output voltage ramp rate (dV/dt). During startup, when the GATE voltage reaches the MOSFET threshold voltage, RAMP outputs a fixed 2.5μA current to charge CR while the inrush current charges load capacitor CL. During dV/dt control the LTC4283 regulates the RAMP to the attenuated load voltage between RTNS and DRNS with an offset: VRAMP = VRTNS – VDRNS + 0.18V and regulates the inrush current to a fixed value that is a function of the attenuation ratio, r and the ratio between load capacitance and RAMP capacitance: IINRUSH = 2.5µA •r • CL CR The attenuation ratio r is set by the external resistive divid- ers at RTNS (RRT and RRB) and DRNS (RDT and RDB) in Figure 6: r= RRT+RRB RRB = RDT+RDB RDB RTNS and DRNS represent the attenuated input voltage and MOSFET drain voltage, respectively. The differential Figure 5. LTC4283 Turn-On Sequence –48V INPUT UVLO AND UV CLEARED 128ms GATE VIN – 1.8V 4283 F05 CURRENT PGIO1 PWRGD1# READY PWRGD2# READY INTERNAL POWER GOOD INRUSH (LATCHED) LOAD1 LOAD1 + LOAD2 MOSFET VDS 2.048V PGIO2 PGIO3 FAULTY POWER GOOD INPUT NORMAL POWER GOOD INPUT 256ms 512ms 256ms Figure 6. dV/dt Inrush Control Using RAMP Capacitor RIN CIN M1 RS RRT 200k 1% RRB 5.11k 1% CL CR RDT 200k 1% RDB 5.11k 1% –48V RTN –48V INPUT VEE SENSE– SENSE+ GATE VZ VIN RTNS LTC4283 VEE VEE RAMP VLOAD VOUT DRNS + – 4283 F06 VEE |
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