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DRV8316 Datasheet(PDF) 69 Page - Texas Instruments

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Part # DRV8316
Description  DRV8316-Q1 Three-Phase Integrated FET Motor Driver
PDF  97 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

DRV8316 Datasheet(HTML) 69 Page - Texas Instruments

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9.2 Typical Applications
9.2.1 Three-Phase Brushless-DC Motor Control
In this application, the DRV8316-Q1 is used to drive a Brushless-DC motor.
9.2.1.1 Detailed Design Procedure
Table 9-1 lists the example input parameters for the system design.
Table 9-1. Design Parameters
DESIGN PARAMETERS
REFERENCE
EXAMPLE VALUE
Supply voltage
VVM
24 V
Motor RMS current
IRMS
3 A
Motor peak current
IPEAK
8 A
PWM Frequency
fPWM
50 kHz
Slew Rate Setting
SR
200 V/µs
Buck regulator output voltage
VBK
3.3 V
ADC reference voltage
VVREF
3.0 V
System ambient temperature
TA
–20°C to +105°C
9.2.1.1.1 Motor Voltage
Brushless-DC motors are typically rated for a certain voltage (for example 12 V). Operating a motor at a higher
voltage corresponds to a lower drive current to obtain the same motor power. Operating at lower voltages
generally allows for more accurate control of phase currents. The DRV8316-Q1 functions down to a supply of
4.5V. A higher operating voltage also corresponds to a higher obtainable rpm. The DRV8316-Q1 allows for a
range of possible operating voltages because of a maximum VM rating of 40 V.
9.2.1.1.2 Using Active Demagnetization
Active demagnetization reduces power losses in the device by turning on the MOSFETs automatically when the
body diode starts conducting to reduce diode conduction losses. It is used in trapezoidal commutation when
switching commutation states (turning a high-side MOSFET off and another high-side MOSFET on while keeping
a low-side MOSFET on). Active demagnetization is enabled when EN_ASR and EN_AAR bits are set in the SPI
variant or OCP/SR pin is set to Mode 3 or Mode 4 in the H/W variant.
When switching commutation states with active demagnetization disabled, dead time is inserted and the low-side
MOSFET’s body diode conducts while turning another high-side MOSFET on to continue sourcing current
through the motor. This conduction period causes higher power losses due to the forward-bias voltage of
the diode and slower dissipation of current. Figure 9-2 shows the body diode conducting when switching
commutation states.
www.ti.com
DRV8316-Q1
SLVSGK9 – JANUARY 2022
Copyright © 2022 Texas Instruments Incorporated
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Product Folder Links: DRV8316-Q1



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