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SN8045 Datasheet(PDF) 13 Page - Texas Instruments

Part # SN8045
Description  Cool-GG Programmable Battery Management IC
PDF  88 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

SN8045 Datasheet(HTML) 13 Page - Texas Instruments

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SN8040
SN8045
Cool-GG Programmable Battery Management IC
SLUS753B – JANUARY 2007 – REVISED FEBRUARY 2008
Electrical Characteristics (continued)
over operating free-air temperature range (unless otherwise noted), TA = –40°C to 85°C, VREG25 = 2.41 V to 2.59 V,
VBAT = 14V, CREG25 = 1µF, CREG33 = 2.2µF; typical values at TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ΔVREG33L
5.4 < VCC or BAT < 25V; IREG33OUT
Line regulation
3
10
mV
INE
= 2mA
0.2mA
≤ I
REG33OUT ≤ 2mA
7
17
ΔVREG33L
Load Regulation
mV
OAD
0.2mA
≤ I
REG33OUT ≤ 25mA
40
100
drawing current until REG33 = 3V
25
100
145
IREG33MA
Current Limit
mA
X
short REG33 to VSS, REG33 = 0V
12
65
THERMISTOR DRIVE
VTOUT
Output voltage
ITOUT = 0mA; TA = 25°C
VREG25
VREG25
VREG25
V
ITOUT = 1mA; RDS(ON) = (VREG25 -
RDS(ON)
TOUT pass element resistance
50
100
Ω
VTOUT) / 1mA; TA = –40°C to 100°C
VCELL+ HIGH VOLTAGE TRANSLATION
VC(n) - VC(n+1) = 0V; TA = –40°C to
0.950
0.975
1
100
°C
VVCELL+O
UT
VC(n) - VC(n+1) = 4.5V; TA = –40°C
0.275
0.3
0.375
to 100
°C
VVCELL+R
internal AFE reference voltage ; TA =
Translation output
0.965
0.975
0.985
V
EF
–40
°C to 100°C
VVCELL+P
Voltage at PACK pin; TA = –40°C to
0.98*VPAC
1.02*VPA
VPACK/18
ACK
100
°C
K/18
CK/18
VVCELL+B
Voltage at BAT pin; TA = –40°C to
0.98*VBAT/
1.02*VBA
VBAT/18
AT
100
°C
18
T/18
CMMR
Common mode rejection ratio
VCELL+
40
dB
K= {VCELL+ output (VC5=0V;
VC4=4.5V) - VCELL+ output
0.147
0.150
0.153
(VC5=0V; VC4=0V)}/4.5
K
Cell scale factor
K= {VCELL+ output (VC2=13.5V;
VC1=18V) - VCELL+ output
0.147
0.150
0.153
(VC5=13.5V; VC1=13.5V)}/4.5
IVCELL+OU
VC(n) - VC(n+1) = 0V; VCELL+ =
Drive Current to VCELL+ capacitor
12
18
µA
T
0V; TA = –40°C to 100°C
CELL output (VC2 = VC1 = 18V) -
VVCELL+O CELL offset error
-18
-1
18
mV
CELL output (VC2 = VC1 = 0V)
VC1=12V, VC2=9V, VC3=6V,
IVCnL
VC(n) pin leakage current
-1
0.01
1
µA
VC4=3V, VC5=0V
CELL BALANCING
RDS(on) for internal FET switch at VDS
RBAL
internal cell balancing FET resistance
200
400
600
Ω
= 2V; TA = 25°C
HARDWARE SHORT CIRCUIT AND OVERLOAD PROTECTION; TA = 25°C (unless otherwise noted)
VOL = 25mV (min)
15
25
35
V(OL)
OL detection threshold voltage accuracy
VOL = 100mV; RSNS = 0, 1
90
100
110
mV
VOL = 205mV (max)
185
205
225
VSCC = 50mV (min)
30
50
70
SCC detection threshold voltage
V(SCC)
VSCC = 200mV; RSNS = 0, 1
180
200
220
mV
accuracy
VSCC = 475mV (max)
428
475
523
VSCD = –50mV (min)
–30
–50
–70
SCD detection threshold voltage
V(SCD)
VSCD = –200mV; RSNS = 0, 1
–180
–200
–220
mV
accuracy
VSCD = –475mV (max)
–428
–475
–523
tda
Delay time accuracy
±15.25
µs
tpd
Protection circuit propagation delay
50
µs
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Specifications
13



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