SN8045 datasheet(23/88 Pages) TI

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3.10 Data and Program Memory

SN8040

SN8045

Cool-GG Programmable Battery Management IC

SLUS753B – JANUARY 2007 – REVISED FEBRUARY 2008

To improve performance and reduce operating power, the SN8040 uses separate data and program

memory address busses, providing ample program and data-storage capability. This feature also allows

for future memory expansion of the SN8040 family without affecting existing programs.

The SN8040 provides 2048 bytes of data RAM on eight 256-byte pages and another 2048 bytes of flash

EPROM on another eight 256-byte pages. The flash EPROM is available to store user specific static data,

such as serial numbers and system operational data, without modifying the program memory. The

SN8040 provides flexible instruction memory for implementing a wide-variety of battery management

functions. For better flash EPROM utilization, the SN8040 instruction memory is separated into two blocks.

The first block is a 24k x 22 flash EPROM for custom user programs and the second block is a 6k x 22

mask ROM containing common programs such as the math and battery-management libraries,

communication, and power-on reset routines. Refer to the SN8040 Mask ROM description for further

details.

In addition, the 2048 bytes of general-purpose SRAM can be powered by the RBI pin of the SN8040 if

power is lost. Typically, a capacitor provides the necessary voltage to the SRAM array during inadvertent

momentary power loss.

Figure 3-5 and Figure 3-6 outline the SN8040 memory maps and shows the address location of the

internal registers. Further details about the SN8040 registers are in the register description section and

Table 3-1, SN8040 register and peripheral map.

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SN8045 Datasheet(PDF) 23 Page - Texas Instruments