SI3232 datasheet(11/128 Pages) SILABS

11 / 128 page

Si3232

Preliminary Rev. 0.96

Table 6. Monitor ADC Characteristics

(VDD, VDD1–VDD4 = 3.13 to 3.47 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Resolution

—

Bits

Differential Nonlinearity

DNL

—

–1.0

±0.75

—

+1.5

LSB

Integral Nonlinearity

INL

—

±0.6

±1.5

LSB

Gain Error

—

±0.1

±0.25

LSB

Table 7. Si3200 Characteristics

(VDD = 3.13 to 3.47 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

TIP/RING Pulldown Transistor

Saturation Voltage

VCM

VRING – VBAT (Forward),

VTIP – VBAT (Reverse)

ILIM =22mA, IABIAS =4mA1

ILIM =45mA, IABIAS =16mA1

⎯

—

TIP/RING Pullup Transistor

Saturation Voltage

VOV

GND – VTIP (Forward)

GND – VRING (Reverse)

ILIM =22mA1

ILIM =45mA1

⎯

—

Battery Switch Saturation

Impedance

RSAT

(VBAT – VBATH)/IOUT (Note 2)

⎯

OPEN State TIP/RING Leakage

Current

ILKG

RL =0 Ω⎯

⎯

100

µA

Internal Blocking Diode Forward

Voltage

VBAT – VBATL (Note 2)

⎯

0.8

⎯

Notes:

1. VAC = 2.5 VPK, RLOAD = 600 Ω.

2. IOUT =60mA

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