ISL70219ASEH

FN8459 Rev. 2.00

Page 7 of 25

Jun 11, 2018

TRANSIENT RESPONSE

Slew Rate, VOUT 20% to 80%

SR

AV = 1, RL = 2kΩVO = 4VP-P

(Note 9)

-0.5

-

V/µs

Rise Time

10% to 90% of VOUT

tr, tf,

Small Signal

AV = 1, VOUT = 50mVP-P,

RL = 10kΩ to VCM (Note 9)

-

130

-

ns

Fall Time

90% to 10% of VOUT

AV = 1, VOUT = 50mVP-P, RL = 10kΩ

to VCM (Note 9)

-

130

-

ns

Settling Time to 0.1%

4V Step; 10% to VOUT

ts

AV = -1, VOUT = 4VP-P, RL = 5kΩ to

VCM (Note 9)

-12

-

µs

Settling Time to 0.01%

4V Step; 10% to VOUT

AV = -1, VOUT = 4VP-P, RL = 5kΩ to

VCM (Note 9)

-19-

µs

Output Positive Overload Recovery

Time

tOL

AV = -100, VIN = 0.2VP-P, RL = 2kΩ

to VCM (Note 9)

-7-

µs

Output Negative Overload Recovery

Time

AV = -100, VIN = 0.2VP-P, RL = 2kΩ

to VCM (Note 9)

-5.8

-

µs

Positive Overshoot

OS+

AV = 1, VOUT = 10VP-P, Rf = 0Ω

RL =2kΩto VCM (V)

-15-

%

Negative Overshoot

OS-

AV = 1, VOUT = 10VP-P, Rf = 0Ω

RL =2kΩto VCM (Note 9)

-15-

%

Electrical Specifications ±5.0V V

S = ±5.0V, VCM = VO = 0V, RL = Open, TA = +25°C, unless otherwise noted. Boldface limits apply

across the operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50rad(Si)/s to

300rad(Si)/s or over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s, unless otherwise noted. (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

(Note 8)TYP

MAX

(Note 8)UNIT

Electrical Specifications ±2.25V V

S = ±2.25V, VCM = VO = 0V, RL = Open, TA= +25°C, unless otherwise noted. Boldface limits apply

across the operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50rad(Si)/s to

300rad(Si)/s or over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s, unless otherwise noted.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

(Note 8)TYP

MAX

(Note 8)UNIT

Input Offset Voltage

VOS

-

10

150

µV

-

250

µV

Offset Voltage Drift

TCVOS

(Note 9)

-

0.1

1

µV/°C

Input Bias Current

IB

TA = +25°C

-2.50

0.18

2.50

nA

TA = -55°C, +125°C

-5

-

5

nA

TA = +25°C, post HDR/LDR Rad

-15

-

15

nA

Input Bias Current Temperature

Coefficient

TCIB

(Note 9)

-5

1

5

pA/°C

Input Offset Current

IOS

TA = +25°C

-2.5

0.3

2.5

nA

TA = -55°C, +125°C

-3

-

3

nA

TA = +25°C, post HDR/LDR Rad

-10

-

10

nA

Input Offset Current Temperature

Coefficient

TCIOS

(Note 9)

-3

0.42

3

pA/°C

Input Voltage Range

VCM

Guaranteed by CMRR Test

-0.25

-

0.25

V

Common-Mode Rejection Ratio

CMRR

VCM = -0.25V to +0.25V

90

110

-

dB

90

--

dB