ISL70219ASEH

FN8459 Rev. 2.00

Page 18 of 25

Jun 11, 2018

Post High Dose Rate Radiation Characteristics Unless otherwise specified, V

S ± 19.8V,

VCM =0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50rad(Si)/s to 300rad(Si)/s. This data is

intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed.

FIGURE 55. SUPPLY CURRENT SHIFT vs HDR RADIATION

FIGURE 56. OFFSET VOLTAGE SHIFT vs HDR RADIATION

FIGURE 57. POSITIVE INPUT BIAS CURRENT SHIFT vs HDR RADIATION

FIGURE 58. NEGATIVE INPUT BIAS CURRENT SHIFT vs HDR RADIATION

FIGURE 59. INPUT OFFSET CURRENT SHIFT vs HDR RADIATION

-0.03

-0.02

-0.01

0.00

0.01

0.02

0.03

0

50

100

150

200

250

300

BIAS

GND

krad(Si)

-3

-2

-1

0

1

2

3

4

5

6

0

50

100

150

200

250

300

krad(Si)

BIAS

GND

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0

50

100

150

200

250

300

krad(Si)

BIAS

GND

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

0

50

100

150

200

250

300

krad(Si)

BIAS

GND

-0.10

-0.08

-0.06

-0.04

-0.02

0.00

0.02

0.04

0.06

0.08

0.10

0

50

100

150

200

250

300

GND

BIAS

krad(Si)