| Electronic Components Datasheet Search |
|
ISL70219ASEHF/PROTO Datasheet(PDF) 22 Page - Renesas Technology Corp |
|
|
|||||||||||||||||||||||||||||
ISL70219ASEHF/PROTO Datasheet(HTML) 22 Page - Renesas Technology Corp |
|
22 / 25 page ![]() ISL70219ASEH FN8459 Rev. 2.00 Page 22 of 25 Jun 11, 2018 Die Characteristics Die Dimensions 2406µm x 2935µm (95 mils x 116 mils) Thickness: 483µm ± 25µm (19 mils ±1 mil) Interface Materials GLASSIVATION Type: Silicon Nitride/Silicon Dioxide Sandwich Thickness: 15kÅ TOP METALLIZATION Type: AlCu (99.5%/0.5%) Thickness: 30kÅ BACKSIDE FINISH Silicon PROCESS PR40 (DI) Assembly Related Information SUBSTRATE POTENTIAL Floating Additional Information WORST CASE CURRENT DENSITY < 2 x 105 A/cm2 TRANSISTOR COUNT 466 Weight of Packaged Device 0.3958 grams (typical) Lid Characteristics Finish: Gold Potential: Unbiased, tied to package Pin 6 Case Isolation to Any Lead: 20 x 109Ω (minimum) Metallization Mask Layout |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |