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ISL70219ASEHF/PROTO Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # ISL70219ASEHF/PROTO
Description  40V Radiation Hardened and SET Enhanced, Precision Low-Power Operational Amplifier
PDF  25 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL70219ASEHF/PROTO Datasheet(HTML) 1 Page - Renesas Technology Corp

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FN8459 Rev. 2.00
Page 1 of 25
Jun 11, 2018
FN8459
Rev. 2.00
Jun 11, 2018
ISL70219ASEH
40V Radiation Hardened and SET Enhanced, Precision Low-Power Operational
Amplifier
DATASHEET
The ISL70219ASEH is a very high precision amplifier featuring
the perfect combination of low noise vs power consumption.
The ISL70219ASEH’s low offset voltage, low IBIAS current, and
low temperature drift make it the ideal choice for applications
requiring both high DC accuracy and AC performance. The
combination of high precision, low noise, low power, and a
small footprint provides outstanding value and flexibility
relative to similar competitive parts.
Applications for these amplifiers include precision active
filters, medical and analytical instrumentation, precision
power supply controls, and industrial controls.
The ISL70219ASEH is offered in a 10 Ld hermetic ceramic
flatpack. The device is packaged in industry standard pin
configurations and operates across the extended temperature
range from -55°C to +125°C.
Related Literature
For a full list of related documents, visit our website
• ISL70219ASEH product page
Applications
• Precision instrumentation
• Spectral analysis equipment
• Active filter blocks, thermocouples, and RTD reference
buffers
• Data acquisition and power supply control
Features
• Electrically screened to DLA SMD# 5962-14226
• Low input offset voltage. . . . . . . . . . . . . . ±110µV, maximum
• Superb offset temperature coefficient. . .1µV/°C, maximum
• Input bias current . . . . . . . . . . . . . . . . . . . . ±15nA, maximum
• Input bias current TC . . . . . . . . . . . . . . . ±5pA/°C, maximum
• Low current consumption . . . . . . . . . . . . . . . . . . . . . . . 440µA
• Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/√Hz
• Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 36V
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
•Radiation environment
- SEB LETTH (VS = ±18V) . . . . . . . . . . . . . . 86.4MeV•cm2/mg
- SET recovery time . . . . . . . . . . . ≤10µs at 60MeV•cm2/m
- SEL immune (SOI process)
- Total dose HDR (50 to 300rad(Si)/s). . . . . . . . 300krad(Si)
- Total dose LDR (10mrad(Si)/s) . . . . . . . . . . . 100krad(Si) *
* Product capability established by initial characterization. The
EH version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.
FIGURE 1. TYPICAL APPLICATION: SALLEN-KEY LOW PASS FILTER
(FC = 10kHz)
FIGURE 2. SET DEVIATION vs DURATION FOR
LET = 60MeV•cm2/mg (VS = ±18V)
-
+
OUTPUT
V+
R1
V-
R2
C1
C2
VIN
1.84k
4.93k
3.3nF
8.2nF
ISL70219ASEH
0
2
4
6
8
10
12
14
16
-8
-6
-4
-2
0
2
4
SET EXTREME DEVIATION (V)


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