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ISL70219ASEHF/PROTO Datasheet(PDF) 1 Page - Renesas Technology Corp |
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ISL70219ASEHF/PROTO Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 25 page ![]() FN8459 Rev. 2.00 Page 1 of 25 Jun 11, 2018 FN8459 Rev. 2.00 Jun 11, 2018 ISL70219ASEH 40V Radiation Hardened and SET Enhanced, Precision Low-Power Operational Amplifier DATASHEET The ISL70219ASEH is a very high precision amplifier featuring the perfect combination of low noise vs power consumption. The ISL70219ASEH’s low offset voltage, low IBIAS current, and low temperature drift make it the ideal choice for applications requiring both high DC accuracy and AC performance. The combination of high precision, low noise, low power, and a small footprint provides outstanding value and flexibility relative to similar competitive parts. Applications for these amplifiers include precision active filters, medical and analytical instrumentation, precision power supply controls, and industrial controls. The ISL70219ASEH is offered in a 10 Ld hermetic ceramic flatpack. The device is packaged in industry standard pin configurations and operates across the extended temperature range from -55°C to +125°C. Related Literature For a full list of related documents, visit our website • ISL70219ASEH product page Applications • Precision instrumentation • Spectral analysis equipment • Active filter blocks, thermocouples, and RTD reference buffers • Data acquisition and power supply control Features • Electrically screened to DLA SMD# 5962-14226 • Low input offset voltage. . . . . . . . . . . . . . ±110µV, maximum • Superb offset temperature coefficient. . .1µV/°C, maximum • Input bias current . . . . . . . . . . . . . . . . . . . . ±15nA, maximum • Input bias current TC . . . . . . . . . . . . . . . ±5pA/°C, maximum • Low current consumption . . . . . . . . . . . . . . . . . . . . . . . 440µA • Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/√Hz • Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 36V • Operating temperature range. . . . . . . . . . . .-55°C to +125°C •Radiation environment - SEB LETTH (VS = ±18V) . . . . . . . . . . . . . . 86.4MeV•cm2/mg - SET recovery time . . . . . . . . . . . ≤10µs at 60MeV•cm2/m - SEL immune (SOI process) - Total dose HDR (50 to 300rad(Si)/s). . . . . . . . 300krad(Si) - Total dose LDR (10mrad(Si)/s) . . . . . . . . . . . 100krad(Si) * * Product capability established by initial characterization. The EH version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate. FIGURE 1. TYPICAL APPLICATION: SALLEN-KEY LOW PASS FILTER (FC = 10kHz) FIGURE 2. SET DEVIATION vs DURATION FOR LET = 60MeV•cm2/mg (VS = ±18V) - + OUTPUT V+ R1 V- R2 C1 C2 VIN 1.84k 4.93k 3.3nF 8.2nF ISL70219ASEH 0 2 4 6 8 10 12 14 16 -8 -6 -4 -2 0 2 4 SET EXTREME DEVIATION (V) |
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