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ISL70219ASEHF/PROTO Datasheet(PDF) 19 Page - Renesas Technology Corp |
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ISL70219ASEHF/PROTO Datasheet(HTML) 19 Page - Renesas Technology Corp |
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19 / 25 page ![]() ISL70219ASEH FN8459 Rev. 2.00 Page 19 of 25 Jun 11, 2018 Post Low Dose Rate Radiation Characteristics Unless otherwise specified, V S ± 19.8V, VCM =0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This data is intended to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed. FIGURE 60. SUPPLY CURRENT SHIFT vs LDR RADIATION FIGURE 61. OFFSET VOLTAGE SHIFT vs LDR RADIATION FIGURE 62. POSITIVE INPUT BIAS CURRENT SHIFT vs LDR RADIATION FIGURE 63. NEGATIVE INPUT BIAS CURRENT SHIFT vs LDR RADIATION FIGURE 64. INPUT OFFSET CURRENT SHIFT vs LDR RADIATION -0.10 -0.08 -0.06 -0.04 -0.02 0.00 0.02 0.04 0.06 0.08 0.10 0 102030 4050 60 708090 100 krad(Si) GND BIASED -15 -10 -5 0 5 10 15 0 102030405060708090 100 krad(Si) GND BIASED -15 -10 -5 0 5 10 15 0 1020 304050 60708090 100 krad(Si) GND BIASED -15 -10 -5 0 5 10 15 0 1020 3040506070 80 90 100 krad(Si) GND BIASED -1.00 -0.80 -0.60 -0.40 -0.20 0.00 0.20 0.40 0.60 0.80 1.00 0 1020 3040 5060708090 100 krad(Si) GND BIASED |
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