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LM5069 Datasheet(PDF) 12 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part # LM5069
Description  Positive High Voltage Hot Swap / Inrush Current Controller with Power Limiting
PDF  22 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM5069 Datasheet(HTML) 12 Page - National Semiconductor (TI)

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Gate Control (Continued)
Current Limit
The current limit threshold is reached when the voltage
across the sense resistor R
S (VIN to SENSE) reaches 55
mV. In the current limiting condition, the GATE voltage is
controlled to limit the current in MOSFET Q1. While the
current limit circuit is active, the fault timer is active as
described in the Fault Timer & Restart section. If the load
current falls below the current limit threshold before the end
of the Fault Timeout Period, the LM5069 resumes normal
operation. For proper operation, the R
S resistor value should
be no larger than 100 m
Ω.
Circuit Breaker
If the load current increases rapidly (e.g., the load is short-
circuited) the current in the sense resistor (R
S) may exceed
the current limit threshold before the current limit control loop
is able to respond. If the current exceeds twice the current
limit threshold (105 mV/R
S), Q1 is quickly switched off by the
230 mA pull-down current at the GATE pin, and a Fault
Timeout Period begins. When the voltage across R
S falls
below 105 mV the 230 mA pull-down current at the GATE pin
is switched off, and the gate voltage of Q1 is then deter-
mined by the current limit or the power limit functions. If the
TIMER pin reaches 4.0V before the current limiting or power
limiting condition ceases, Q1 is switched off by the 2 mA
pull-down current at the GATE pin as described in the Fault
Timer & Restart section.
Power Limit
An important feature of the LM5069 is the MOSFET power
limiting. The Power Limit function can be used to maintain
the maximum power dissipation of MOSFET Q1 within the
device SOA rating. The LM5069 determines the power dis-
sipation in Q1 by monitoring its drain-source voltage
(SENSE to OUT), and the drain current through the sense
resistor (VIN to SENSE). The product of the current and
voltage is compared to the power limit threshold pro-
grammed by the resistor at the PWR pin. If the power
dissipation reaches the limiting threshold, the GATE voltage
is modulated to reduce the current in Q1. While the power
limiting circuit is active, the fault timer is active as described
in the Fault Timer & Restart section.
Fault Timer & Restart
When the current limit or power limit threshold is reached
during turn-on or as a result of a fault condition, the gate-to-
source voltage of Q1 is modulated to regulate the load
current and power dissipation. When either limiting function
is activated, an 85 µA fault timer current source charges the
external capacitor (C
T) at the TIMER pin as shown in Figure
6 (Fault Timeout Period). If the fault condition subsides
during the Fault Timeout Period before the TIMER pin
reaches 4.0V, the LM5069 returns to the normal operating
mode and C
T is discharged by the 2.5 µA current sink. If the
TIMER pin reaches 4.0V during the Fault Timeout Period,
Q1 is switched off bya2mA pull-down current at the GATE
pin. The subsequent restart procedure then depends on
which version of the LM5069 is in use.
The LM5069-1 latches the GATE pin low at the end of the
Fault Timeout Period. C
T is then discharged to ground by the
2.5 µA fault current sink. The GATE pin is held low by the 2
mA pull-down current until a power up sequence is externally
initiated by cycling the input voltage (V
SYS), or momentarily
pulling the UVLO pin below 2.5V with an open-collector or
open-drain device as shown in Figure 5. The voltage at the
TIMER pin must be <0.3V for the restart procedure to be
effective.
20197214
FIGURE 4. Gate Control
www.national.com
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