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EPCS4 Datasheet(PDF) 16 Page - Altera Corporation |
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EPCS4 Datasheet(HTML) 16 Page - Altera Corporation |
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16 / 32 page ![]() 4–16 Core Version a.b.c variable Altera Corporation Configuration Handbook, Volume 2 July 2004 Serial Configuration Device Memory Access Figure 4–10. Write Status Operation Timing Diagram Read Bytes Operation The read bytes operation code is b'0000 0011, with the MSB listed first. To read the memory contents of the serial configuration device, the device is first selected by driving nCS low. Then, the read bytes operation code is shifted-in followed by a 3-byte address ( A[23..0]). Each address bit must be latched-in on the rising edge of the DCLK. After the address is latched in, the memory contents of the specified address are shifted out serially on the DATA pin, beginning with the MSB. Each data bit is shifted out on the falling edge of DCLK. The maximum DCLK frequency during the read bytes operation is 20 MHz. Figure 4–11 shows the timing diagram for read bytes operation. The first byte addressed can be at any location. The device automatically increments the address to the next higher address after shifting out each byte of data. Therefore, the device can read the whole memory with a single read bytes operation. When the device reaches the highest address, the address counter restarts at 0x000000, allowing the memory contents to be read out indefinitely until the read bytes operation is terminated by driving nCS high. The device can drive nCS high any time after data is shifted out. If the read bytes operation is shifted in while a write or erase cycle is in progress, the operation will not be executed. Additionally, it will not have any effect on the write or erase cycle in progress. nCS DCLK ASDI DATA 0 1 2 3 4 5 6 7 8 9 101112131415 Operation Code Status Register 76543210 MSB High Impedance |
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