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PCD5008 Datasheet(PDF) 54 Page - NXP Semiconductors |
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PCD5008 Datasheet(HTML) 54 Page - NXP Semiconductors |
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54 / 64 page ![]() 1998 Jun 17 54 Philips Semiconductors Product specification FLEX ™ Pager Decoder PCD5008 9 LIMITING VALUES In accordance with the absolute maximum rating system (IEC 134). Notes 1. VDD1 and VDD2 respectively VSS1 and VSS2 must be connected at the same potential. 2. VI(max) = 5.0 V. 10 DC CHARACTERISTICS Tamb = −25 to +70 °C; VDD = 2.2 V; f = 76.8 kHz; unless otherwise specified. Notes 1. External clock signal (frequency = 76.8 kHz, amplitude = VSS to VDD) at pin EXTAL; OSCPD = HIGH; test inputs = LOW; other inputs = HIGH; outputs unconnected (note that any additional capacitive load at pin CLKOUT increases the supply current); SPI transmit enabled; to obtain the supply current of an application with a crystal connected as in Fig.18, a typical oscillator current of 2 µA needs to be added to this value (see Chapter 12); Tamb = 25 °C. 2. As note 1, but PCD5008 configured via SPI and synchronous to a typical FLEX ™ data stream (collapse value = 4), Tamb = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDD supply voltage note 1 −0.5 +5.0 V IDD supply current − 50 mA II DC input current (any input) −10 +10 mA IO DC output current (any output) −10 +10 mA VI input voltages (all inputs) note 2 −0.5 VDD + 0.5 V Ptot total power dissipation − 300 mW PO power dissipation per output − 10 mW Tamb operating ambient temperature −25 +70 °C Tstg storage temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VDD supply voltage 1.8 2.2 3.6 V IDD(stby) standby supply current on = 0; note 1 − 4.2 10 µA IDD operating supply current on = 1; note 2 − 4.4 −µA Digital inputs: OSCPD, TEST2, TEST3, RESET, LOBAT, EXTS0, EXTS1, SS and MOSI VIL LOW-level input voltage −− 0.2VDD V VIH HIGH-level input voltage 0.8VDD −− V ILI LOW/HIGH-level input leakage current −− 1 µA Digital outputs: MISO, READY, CLKOUT, SYMCLK and S0 to S7 VOL LOW-level output voltage Isink = 0.8 mA − 0.1 0.4 V VOH HIGH-level output voltage Isource = −0.8 mA VDD − 0.4 VDD − 0.1 − V ILO LOW/HIGH-level output leakage current 3-state outputs −− 1 µA |
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