33661 datasheet(7/21 Pages) FREESCALE

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Analog Integrated Circuit Device Data

Freescale Semiconductor

33661

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

Table 4. Dynamic Electrical Characteristics

Characteristics noted under conditions 7.0 V

≤ V

SUP ≤ 18 V, - 40°C ≤ T

A ≤ 125°C, GND = 0 V unless otherwise noted. Typical

values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

LIN OUTPUT TIMING CHARACTERISTICS FOR NORMAL MODE

Dominant Propagation Delay Time TXD to LIN (6)

Measurement Threshold (50% TXD to 58.1% VSUP)

Measurement Threshold (50% TXD to 28.4% VSUP)

tDOM(MIN)

tDOM(MAX)

—

µs

Recessive Propagation Delay Time TXD to LIN (6)

Measurement Threshold (50% TXD to 42.2% VSUP)

Measurement Threshold (50% TXD to 74.4% VSUP)

tREC(MIN)

tREC(MAX)

—

µs

Propagation Delay Time Symmetry

tDOM(MIN) to tREC(MAX)

tDOM(MAX) to tREC(MIN)

dt1

dt2

-10.44

—

8.12

µs

LIN OUTPUT TIMING CHARACTERISTICS FOR SLOW MODE

Dominant Propagation Delay Time TXD to LIN (6)

Measurement Threshold (50% TXD to 61.6% VSUP)

Measurement Threshold (50% TXD to 25.1% VSUP)

tDOM(MIN)

tDOM(MAX)

—

100

µs

Recessive Propagation Delay Time TXD to LIN (6)

Measurement Threshold (50% TXD to 38.9% VSUP)

Measurement Threshold (50% TXD to 77.8% VSUP)

tREC(MIN)

tREC(MAX)

—

100

µs

Propagation Delay Time Symmetry

tDOM(MIN) to tREC(MAX)

tDOM(MAX) to tREC(MIN)

dt1S

dt2S

-21.88

—

17.44

µs

LIN OUTPUT DRIVER FAST MODE

LIN Fast Slew Rate (Programming Mode)

Fast Slew Rate

dv/dt fast

—

µs

LIN PIN

Overcurrent Shutdown Delay Time (7)

tOV-DELAY

—

µs

LIN RECEIVER CHARACTERISTICS

Receiver Dominant Propagation Delay Time (8)

LIN LOW to RXD LOW

tRL

—

3.5

6.0

µs

Receiver Recessive Propagation Delay Time (8)

LIN HIGH to RXD HIGH

tRH

—

3.5

6.0

µs

Receiver Propagation Delay Time Symmetry

tRL - tRH

tR-SYM

-2.0

—

2.0

µs

Notes

67.0 V

≤ V

SUP ≤ 18 V. Bus load R0 and C0: 1.0 nF / 1.0 kΩ, 6.8 nF / 660 Ω, 10 nF / 500 Ω.

This parameter is guaranteed by design; however, it is not production tested.

Measured between LIN signal threshold VLINL or VLINH and 50% of RXD signal.

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