OPA830 datasheet(4/56 Pages) TI

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

VS– to VS+

Supply voltage

5.5

Supply turn-on and turn-off maximum dV/dT(2)

V/µs

Input voltage

VS– – 0.5

VS+ + 0.5

VID

Differential input voltage

±1

Continuous input current

±10

Continuous output current(3)

±20

Continuous power dissipation

See Thermal Information

Maximum junction temperature

150

°C

Operating free-air temperature

–40

125

°C

Tstg

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress

ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

(2)

Stay below this ± supply turn-on edge rate to prevent the edge-triggered ESD absorption device across the supply pins from turning

on.

(3)

Long-term continuous output current for electromigration limits.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±1500

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1000

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VS+

Single-supply voltage

2.7

5.4

Ambient temperature

–40

125

°C

6.4 Thermal Information

THERMAL METRIC(1)

OPA838

UNIT

DBV

(SOT-23)

DCK

(SC70)

DCKS

(SC70)

DXB

(X2SON)

6 PINS

5 PINS

6 PINS

8 Pins

RθJA

Junction-to-ambient thermal resistance

194

203

189

194

°C/W

RθJCtop

Junction-to-case (top) thermal resistance

129

152

150

°C/W

RθJB

Junction-to-board thermal resistance

109

°C/W

ψJT

Junction-to-top characterization parameter

°C/W

ψJB

Junction-to-board characterization parameter

109

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

OPA838

SBOS867D – AUGUST 2017 – REVISED SEPTEMBER 2024

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