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HT46RB50 Datasheet(PDF) 4 Page - Holtek Semiconductor Inc |
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HT46RB50 Datasheet(HTML) 4 Page - Holtek Semiconductor Inc |
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4 / 53 page  Pin Name I/O Options Description PE2/SDI I/O Pull-high (nibble option) Bidirectional I/O lines. Software instructions determine the CMOS output or Schmitt trigger input with pull-high resistor (determined by pull-high options: nibble option). The PE2 is pin-shared with SDI. SDI is Serial interface serial input. PE3/SDO I/O Pull-high (nibble option) Bidirectional I/O lines. Software instructions determine the CMOS output or Schmitt trigger input with pull-high resistor (determined by pull-high options: nibble option). The PE3 is pin-shared with SDO. SDO is a Serial interface serial output. PE4~PE5 I/O Pull-high (nibble option) Bidirectional I/O lines. Software instructions determine the CMOS output or Schmitt trigger input with pull-high resistor (determined by pull-high options: nibble option). RES I ¾ Schmitt trigger reset input, active low VSS ¾¾ Negative power supply, ground AVSS ¾¾ ADC negative power supply, ground VDD ¾¾ Positive power supply AVDD ¾¾ ADC positive power supply, AVDD should be externally connected to VDD. OSC1 OSC2 I O ¾ OSC1 and OSC2 are connected to a 6MHz or 12MHz Crystal/resonator (de- termined by software instructions) for the internal system clock. V33O O ¾ 3.3V regulator output. UDP I/O ¾ UDP is USBD+ line USB function is controlled by software control register. UDN I/O ¾ UDN is USBD- line USB function is controlled by software control register. Absolute Maximum Ratings Supply Voltage ...........................VSS -0.3V to VSS+6.0V Storage Temperature ............................ -50°Cto125°C Input Voltage..............................VSS -0.3V to VDD+0.3V Operating Temperature........................... -40°Cto85°C IOL Total ..............................................................150mA IOH Total............................................................ -100mA Total Power Dissipation .....................................500mW Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil- ity. D.C. Characteristics Ta=25 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VDD Operating Voltage ¾ fSYS=6MHz 2.2 ¾ 5.5 V fSYS=12MHz 2.7 ¾ 5.5 V IDD1 Operating Current (6MHz Crystal) 5V No load, fSYS=6MHz ¾ 6.5 12 mA IDD2 Operating Current (12MHz Crystal) 3V No load, fSYS=12MHz ¾ 3.6 10 mA 5V ¾ 7.5 16 mA ISTB1 Standby Current (WDT Enabled) 3V No load, system HALT, USB suspended ¾¾ 5 mA 5V ¾¾ 10 mA ISTB2 Standby Current (WDT Disabled) 3V No load, system HALT, USB suspended ¾¾ 1 mA 5V ¾¾ 2 mA HT46RB50 Rev. 1.20 4 November 1, 2006 |
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