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TMP89FS60 Datasheet(PDF) 329 Page - Toshiba Semiconductor |
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TMP89FS60 Datasheet(HTML) 329 Page - Toshiba Semiconductor |
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329 / 410 page ![]() Page 315 TMP89FS60 RA003 21.3.2 Sector erase (4-kbyte partial erase) Data in the erased area is 0xFF. Note 1: The data and code areas become mirror areas. As you access these areas, you are brought to the same physical address in memory. When performing a sector erase, make sure that you erase data from either of these two areas, not both. Note 2: Do not perform a sector erase on areas other than those shown in Table 21-3. Table 21-2 Range of Addresses Specifiable (BA) Write Area FLSCR1 <FAREA> Address specified by instruction (Address of 4th bus write cycle) AREA D0 (Data area) 0x1000 through 0x7FFF 01 0x9000 through 0xFFFF AREA D1 (Data area) 0x8000 through 0xFFFF 00 0x8000 through 0xFFFF AREA C0 (Code area) 0x1000 through 0x7FFF 11 0x9000 through 0xFFFF AREA C1 (Code area) 0x8000 through 0xFFFF 10 0x8000 through 0xFFFF This command erases the flash memory in units of 4 kbytes. The flash memory area to be erased is specified by the upper 4 bits of the 6th bus write cycle address. The range of addresses that can be specified is shown in Table 21-3. For example, to erase 4 kbytes from 0x1000 through 0x1FFF in the code area, set FLSCR1<FAR- EA> to "0y11", set "0xD5" on FLSCR2<CR1EN>, and then specify either 0x9000 or 0x9FFF as the 6th bus write cycle. The sector erase command is effective only in MCU and serial PROM modes, and it cannot be used in parallel PROM mode. The time needed to erase 4 kbytes is 30 ms maximum. The next command sequence cannot be executed if an ongoing erase operation is not completed. To check the completion of the erase operation, perform read opera- tions twice on the same address in the flash memory, and perform polling until the same data is read from the flash memory. During the erase operation, bit 6 is reversed each time a read is performed. |
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