AFE031 datasheet(10/59 Pages) TI2

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AFE031

SBOS531E – AUGUST 2010 – REVISED JUNE 2019

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8.5

Electrical Characteristics: Power Amplifier (PA)

At TJ = 25°C, PA_VS = 16 V, VAVDD = VDVDD = 3.3 V, and 10 kΩ connected to PA_ISET (pin 46), unless otherwise noted.

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

Input

Input voltage range

GND – 0.1

PA_VS + 0.1

Input resistance

kΩ

Frequency Response

Bandwidth

ILOAD = 0

670

kHz

Slew rate

10-V step

V/μs

Full-power bandwidth

VOUT = 10 VPP

300

kHz

AC PSRR

f = 50 kHz

Output

Voltage output swing from

PA_VS

IO = 300 mA, sourcing

0.3

IO = 1.5 A, sourcing

1.7

Voltage output swing from

PA_Gnd

IO = 300 mA, sinking

0.3

IO = 1.5 A, sinking

1.3

Maximum continuous current, dc

7.5 kΩ connected to PA_ISET

1.5

Maximum peak current, ac

TJ = –40°C to +125°C, f = 50 kHz

1.7

Output resistance

IO = 1.5 A

0.1

PA disabled

Output impedance, f = 100 kHz, REF1

enabled

145 ll 120

kΩ ll pF

Output current limit range

±0.4 to ±1.5

Current limit equation

ILIM = 20 kΩ • [1.2 V/(RSET + 5 kΩ)]

Solved for RSET (Current Limit)

RSET = [(20 kΩ • 1.2 V/ILIM) – 5 kΩ]

Gain

RLOAD = 1 kΩ

Nominal gain

6.5

V/V

Gain error

–1%

0.1%

Gain error drift

TJ = –40°C to +125°C

±1

ppm/°C

TSENSE Diode

Diode ideality factor

1.033

Thermal Shutdown

Junction temperature at shutdown

160

°C

Hysteresis

°C

Return to normal operation

145

°C

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