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BQ24192 Datasheet(PDF) 6 Page - Texas Instruments |
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BQ24192 Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 53 page ![]() bq24190, bq24192, bq24192I SLUSAW5B – JANUARY 2012 – REVISED DECEMBER 2014 www.ti.com 8.2 ESD Ratings VALUE UNIT Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) 1000 V(ESD) Electrostatic discharge V Charged device model (CDM), per JEDEC specification JESD22- 250 C101(2) (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 8.3 Recommended Operating Conditions MIN MAX UNIT VIN Input voltage 3.9 17(1) V IIN Input current 3 A ISYS Output current (SYS) 4.5 A VBAT Battery voltage 4.4 V Fast charging current 4.5 A 6 (continuous) IBAT 9 (peak) Discharging current with internal MOSFET A (up to 1 sec duration) TA Operating free-air temperature range –40 85 °C (1) The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BTST or SW pins. A tight layout minimizes switching noise. 8.4 Thermal Information bq2419x THERMAL METRIC(1) UNIT RGE (24 PIN) RθJA Junction-to-ambient thermal resistance 32.2 RθJCtop Junction-to-case (top) thermal resistance 29.8 RθJB Junction-to-board thermal resistance 9.1 °C/W ψJT Junction-to-top characterization parameter 0.3 ψJB Junction-to-board characterization parameter 9.1 RθJCbot Junction-to-case (bottom) thermal resistance 2.2 (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 8.5 Electrical Characteristics VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values unless other noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT QUIESCENT CURRENTS VVBUS < VUVLO, VBAT = 4.2 V, leakage between 5 µA BAT and VBUS High-Z Mode, or no VBUS, BATFET disabled IBAT Battery discharge current (BAT, SW, SYS) 12 20 µA (REG07[5] = 1), –40°C to 85°C High-Z Mode, or no VBUS, REG07[5] = 0, –40°C 32 55 µA to 85°C VVBUS = 5 V, High-Z mode 15 30 µA VVBUS = 17 V, High-Z mode 30 50 µA VVBUS > VUVLO, VVBUS > VBAT, converter not 1.5 3 mA switching IVBUS Input supply current (VBUS) VVBUS > VUVLO, VVBUS > VBAT, converter 4 mA switching, VBAT = 3.2 V, ISYS = 0 A VVBUS > VUVLO, VVBUS > VBAT, converter 15 mA switching, VBAT = 3.8 V, ISYS = 0 A VBAT = 4.2 V, Boost mode, IVBUS = 0 A, IOTGBOOST Battery discharge current in boost mode 4 mA converter switching 6 Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated Product Folder Links: bq24190 bq24192 bq24192I |
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