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BQ24192 Datasheet(PDF) 6 Page - Texas Instruments

Part # BQ24192
Description  bq2419x I2C Controlled 4.5-A Single Cell USB/Adapter Charger with Narrow VDC Power Path Management and USB OTG
PDF  53 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

BQ24192 Datasheet(HTML) 6 Page - Texas Instruments

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bq24190, bq24192, bq24192I
SLUSAW5B – JANUARY 2012 – REVISED DECEMBER 2014
www.ti.com
8.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
1000
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per JEDEC specification JESD22-
250
C101(2)
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
8.3 Recommended Operating Conditions
MIN
MAX
UNIT
VIN
Input voltage
3.9
17(1)
V
IIN
Input current
3
A
ISYS
Output current (SYS)
4.5
A
VBAT
Battery voltage
4.4
V
Fast charging current
4.5
A
6 (continuous)
IBAT
9 (peak)
Discharging current with internal MOSFET
A
(up to 1 sec
duration)
TA
Operating free-air temperature range
–40
85
°C
(1)
The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BTST or SW pins. A tight
layout minimizes switching noise.
8.4 Thermal Information
bq2419x
THERMAL METRIC(1)
UNIT
RGE (24 PIN)
RθJA
Junction-to-ambient thermal resistance
32.2
RθJCtop
Junction-to-case (top) thermal resistance
29.8
RθJB
Junction-to-board thermal resistance
9.1
°C/W
ψJT
Junction-to-top characterization parameter
0.3
ψJB
Junction-to-board characterization parameter
9.1
RθJCbot
Junction-to-case (bottom) thermal resistance
2.2
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
8.5 Electrical Characteristics
VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values unless other
noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
QUIESCENT CURRENTS
VVBUS < VUVLO, VBAT = 4.2 V, leakage between
5
µA
BAT and VBUS
High-Z Mode, or no VBUS, BATFET disabled
IBAT
Battery discharge current (BAT, SW, SYS)
12
20
µA
(REG07[5] = 1), –40°C to 85°C
High-Z Mode, or no VBUS, REG07[5] = 0, –40°C
32
55
µA
to 85°C
VVBUS = 5 V, High-Z mode
15
30
µA
VVBUS = 17 V, High-Z mode
30
50
µA
VVBUS > VUVLO, VVBUS > VBAT, converter not
1.5
3
mA
switching
IVBUS
Input supply current (VBUS)
VVBUS > VUVLO, VVBUS > VBAT, converter
4
mA
switching, VBAT = 3.2 V, ISYS = 0 A
VVBUS > VUVLO, VVBUS > VBAT, converter
15
mA
switching, VBAT = 3.8 V, ISYS = 0 A
VBAT = 4.2 V, Boost mode, IVBUS = 0 A,
IOTGBOOST
Battery discharge current in boost mode
4
mA
converter switching
6
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Product Folder Links: bq24190 bq24192 bq24192I



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